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SummaryAgainst exact answers: how the error shrinks with the meshCommon waveguides against MPBLeakage into the substrate, against exactBends, against a full-wave simulationEIM or FDE: when the free engine is enoughLimitsData and how it was producedAppendix: every comparison

Benchmark

PIC Waveguide Mode Solver: benchmark

How accurate is it? The PIC Waveguide Mode Solver finds the guided modes of an optical waveguide's cross-section: the effective index, the group index and dispersion, and the loss when the waveguide bends or leaks into the substrate. It has two engines. EIM ("Effective index" in the tool's engine menu), the effective index method, is free and runs in your browser. FDE ("Full-vectorial" in the menu), a finite-difference mode solver that keeps every field component, is paid and runs on our servers, at three mesh levels: Coarse (the default), Standard and Fine. This page measures both against exact answers and against two free, independent programs, MPB and Meep, which we ran ourselves.

PIC Waveguide Mode Solver

Short answer: on every exact test, FDE's effective index is within the accuracy the tool prints at each mesh level. Against an independent mode solver it agrees to within 0.0072 at the default Coarse mesh and 9.7 × 10⁻⁴ at the finest mesh we ran; on two silicon waveguides the difference at Fine is larger than the 6e-4 the tool prints, and we have not found why.

Summary

  1. Exact answers. On 16 modes of shapes whose answer is known exactly, FDE's effective index stays within the accuracy the tool prints at every mesh level: 48 of 48 comparisons.
  2. Independent mode solver. On 19 values from common silicon, silicon nitride and lithium niobate waveguides, FDE at its finest mesh differs from MPB by 0.00935 % typically and 1.71 % at most, for how a pulse spreads on a silicon nitride strip in air; see Limits. On 6 of the 19 it lands inside MPB's own range.
  3. Full-wave simulation of bends. On silicon strip and slot waveguides bent to radii from 1 to 10 µm, FDE at its finest mesh lands inside Meep's range on 8 of 9 values. The one outside is the loss of the bent slot waveguide at 2 µm, +1.67 % from Meep's value where Meep's own range is ±0.423 %; at 4.67 µm it lands inside, +1.22 % against ±1.75 %; see Limits.
  4. Where the free engine falls short. Outside flat layers, where it is exact by construction, EIM lands outside the reference on all 23 values, furthest for loss in a bend and for how a pulse spreads; on a silicon strip in SiO₂ it gets the sign of the dispersion wrong. When EIM is enough

On every value where both engines give a number, FDE at its finest mesh is at least as close to the reference as EIM.

An independent program's answer also shifts a little with its own settings. Its range is that shift at its finest settings, and the record prints every difference, inside it or outside it.

Against exact answers: how the error shrinks with the mesh

Some waveguides have answers that follow from an exact equation: flat slabs, a slab bent into an arc, and a slab that leaks into a substrate. We solve each one with FDE at its three mesh levels and compare with the exact answer, computed to 24 significant figures. For each material the tool prints how accurate its effective index is at each level. Figure 1 puts that printed accuracy, dashed, over the error we measure here.

S1
SiO₂ / AirSi, n 3.4760t 220 nmSiO₂, n 1.4440closed box 2 × 2.22 µm

A 220 nm silicon slab on SiO₂, with air or SiO₂ above, at 1550 nm. For TM, the exact answer is for the slab inside the same closed 2 µm box FDE solves in.

Open a silicon waveguide in the tool
S2
R = 10, 5 and 3 µmw 400 nm, n 2.0000SiO₂, n 1.4440E ⊙

A slab of index 2.0, 400 nm wide, in SiO₂, bent into an arc of 10, 5 and 3 µm radius, with the electric field out of the plane of the bend.

It is held to the accuracy the tool prints for silicon nitride.

Open a silicon nitride waveguide in the tool
S3
AirLiNbO₃ (crystal axis ↕)t 300 nmSiO₂, n 1.4440closed box 2 × 10.48 µm

A 300 nm lithium niobate film on SiO₂, air above, crystal axis normal to the film, TM mode, inside a closed 2 × 10.48 µm box.

n_o 2.2111, n_e 2.1376

Open a lithium niobate waveguide in the tool
Figure 1. FDE's effective index against exact answers at its three mesh levels; dashed, the accuracy the tool prints for each level. The exact answers carry no visible range (computed to 24 significant figures).

(a) Silicon

10⁻⁴10⁻³10⁻²51020Cell size (nm)Error in effective indexSiO₂ buffer 0.3 µmSiO₂ buffer 0.3 µmSiO₂ buffer 0.3 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.7 µmSiO₂ buffer 0.7 µmSiO₂ buffer 0.7 µmSiO₂ buffer 0.3 µmSiO₂ buffer 0.3 µmSiO₂ buffer 0.3 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.5 µmSiO₂ buffer 0.7 µmSiO₂ buffer 0.7 µmSiO₂ buffer 0.7 µm

(b) Bent slab of index 2.0, held to the silicon nitride accuracy

10⁻⁵10⁻⁴10⁻³10⁻²8.717.434.8Cell size (nm)Error in effective index

(c) Lithium niobate

10⁻⁵10⁻⁴10⁻³10⁻²7.915.731.5Cell size (nm)Error in effective index
  • slab in a closed box
  • slab, air above
  • slab, SiO₂ above
  • slab on a buffer, air above
  • slab on a buffer, SiO₂ above
  • TE
  • TM
  • E ⊙
  • Accuracy the tool prints

Table 1. Accuracy the tool prints for FDE's effective index, by material and mesh level

MaterialCoarseStandardFine
silicon9e-33e-36e-4
silicon nitride2e-33e-48e-5
lithium niobate2e-34e-41e-4
InGaAsP (Q1.25)9e-53e-56e-6

Each figure is how far FDE's answer at that level is from its own answer on finer meshes, measured on waveguides of that material and rounded up to one significant figure. It is not a comparison with another program; the sections below are. For lithium niobate, see the note below. No shape on this page is made of InGaAsP, so its figure is not tested here.

Lithium niobate. Its printed figure at each level is the larger of two measurements: the tool's lithium niobate rib preset, and the flat lithium niobate slab in the exact-answer section. At Fine, checking the slab against a finer mesh needs more memory than a solve may use, so its Fine figure is measured against the value its Standard and Fine results extrapolate to, assuming the error shrinks as the square of the cell size.

Table 2. Largest error measured here, with the cell size each level used

Material (modes)CoarseStandardFine
silicon (12)0.00849 at 20.0 nm (prints 9e-3)0.00212 at 10.0 nm (prints 3e-3)5.29 × 10⁻⁴ at 5.0 nm (prints 6e-4)
silicon nitride (3)5.37 × 10⁻⁴ at 34.8 nm (prints 2e-3)1.31 × 10⁻⁴ at 17.4 nm (prints 3e-4)3.26 × 10⁻⁵ at 8.7 nm (prints 8e-5)
lithium niobate (1)0.00135 at 31.5 nm (prints 2e-3)3.67 × 10⁻⁴ at 15.7 nm (prints 4e-4)9.17 × 10⁻⁵ at 7.9 nm (prints 1e-4)

Table 3. Group index and dispersion on the silicon slab, against the exact answer

SlabQuantityExactFDE error, CoarseStandardFine
220 nm Si, air above, TEdispersion (β₂) (ps²/m)0.621+0.161 %+0.0173 %+9.12 × 10⁻⁴ %
220 nm Si, air above, TEgroup index3.59−0.131 %−0.0332 %−0.00840 %
220 nm Si, air above, TMdispersion (β₂) (ps²/m)16.5−2.59 %−0.658 %−0.181 %
220 nm Si, air above, TMgroup index4.07+0.665 %+0.164 %+0.0377 %
220 nm Si, SiO₂ above, TEdispersion (β₂) (ps²/m)0.682+0.0370 %−0.00931 %−0.00528 %
220 nm Si, SiO₂ above, TEgroup index3.58−0.125 %−0.0316 %−0.00799 %
220 nm Si, SiO₂ above, TMdispersion (β₂) (ps²/m)10.5−2.18 %−0.551 %−0.149 %
220 nm Si, SiO₂ above, TMgroup index3.93+0.489 %+0.121 %+0.0286 %

On these slabs FDE's group index is within 0.038 % of the exact answer at Fine and within 0.67 % at Coarse; its dispersion is within 0.19 % at Fine and 2.6 % at Coarse.

Common waveguides against MPB

MPB is a free, open-source mode solver from MIT. We solved the tool's preset waveguides with it at resolutions up to 400 pixels per µm. Its range is how much its answer still moves at its finest settings. Table 4 lists the effective index, group index and dispersion β₂; Figure 2 shows FDE's difference from MPB at Coarse and at the finest level we ran.

S6 SOI Strip 220
w 500 nmt 220 nmSiAirSiO₂200 nm

Si on SiO₂, air above; 500 × 220 nm; 1550 nm

Si 3.4777, SiO₂ 1.4440, air 1.0000

Open this case in the tool
S7 SOI Strip 220
w 500 nmt 220 nmSiSiO₂SiO₂200 nm

Si on SiO₂, SiO₂ above; 500 × 220 nm; 1550 nm

Si 3.4777, SiO₂ 1.4440

Open this case in the tool
S8 SOI Rib
w 500 nmetch 130 nmSiAirSiO₂200 nmslab 90 nm

Si rib on SiO₂, air above; 500 nm wide, 220 nm thick, 90 nm slab; 1550 nm

Open this case in the tool
S9 Slot Waveguide
w 300 nmgap 100 nmt 220 nmSiAirSiO₂500 nm

Si rails 300 nm wide with a 100 nm slot, 220 nm high, on SiO₂, air above; 1550 nm

Open this case in the tool
S10 LNOI Rib (x-cut)
w 800 nmetch 350 nmLiNbO₃SiO₂SiO₂500 nmslab 250 nm

LiNbO₃ rib, x-cut, in SiO₂; 800 nm wide, 600 nm film, 250 nm slab; 1550 nm

Open this case in the tool
S11 SiN Strip 400
w 1000 nmt 400 nmSi₃N₄AirSiO₂500 nm
w 1000 nmt 400 nmSi₃N₄SiO₂SiO₂500 nm

Si₃N₄ on SiO₂, air above; 1000 × 400 nm; 1550 nm

Si₃N₄ on SiO₂, SiO₂ above; 1000 × 400 nm; 1550 nm

Si₃N₄ 1.9963, SiO₂ 1.4440

Open this case in the tool
Open this case in the tool

Table 4. FDE and EIM against MPB

WaveguideQuantityMPB valueMPB range (±)FDE − MPB, CoarseFDE − MPB, finest level runEIM − MPB
SOI Strip 220, single solve at 1550 nmeffective index, TE02.394.13 × 10⁻⁶−0.00183 (outside)+1.74 × 10⁻⁵ (outside, Fine)+0.0361 (outside)
SOI Strip 220, single solve at 1550 nm, the box the tool sizeseffective index, TM01.586.11 × 10⁻⁵+0.00719 (outside)+8.77 × 10⁻⁴ (outside, Fine)+0.0628 (outside)
SOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm boxeffective index, TM01.582.89 × 10⁻⁵+0.00692 (outside)+5.87 × 10⁻⁴ (outside, Fine)+0.0627 (outside)
SOI Ribeffective index, TE02.531.51 × 10⁻⁶−6.86 × 10⁻⁴ (outside)+1.62 × 10⁻⁴ (outside, Standard)+0.0443 (outside)
Slot Waveguideeffective index, TE01.747.41 × 10⁻⁵+0.00693 (outside)+9.69 × 10⁻⁴ (outside, Fine)+0.184 (outside)
LNOI Rib (x-cut)effective index, TE01.863.54 × 10⁻⁶−7.21 × 10⁻⁵ (outside)+1.13 × 10⁻⁵ (outside, Standard)no value
LNOI Rib (x-cut)effective index, TM01.851.58 × 10⁻⁵+8.57 × 10⁻⁴ (outside)+2.18 × 10⁻⁴ (outside, Standard)no value
SiN Strip 400dispersion (β₂) (ps²/m)0.9894.94 × 10⁻⁴+0.00256 (outside)−0.0169 (outside, Fine)−0.649 (outside)
SiN Strip 400effective index1.571.84 × 10⁻⁵−2.55 × 10⁻⁴ (outside)+1.15 × 10⁻⁶ (inside, Fine)+7.35 × 10⁻⁴ (outside)
SiN Strip 400group index2.141.36 × 10⁻⁴−0.00191 (outside)+3.04 × 10⁻⁴ (outside, Fine)+0.0218 (outside)
SiN Strip 400, SiO₂ abovedispersion (β₂) (ps²/m)1.011.78 × 10⁻⁵−0.0102 (outside)−0.00657 (outside, Fine)+0.0535 (outside)
SiN Strip 400, SiO₂ aboveeffective index1.641.16 × 10⁻⁵−1.98 × 10⁻⁴ (outside)−5.30 × 10⁻⁶ (inside, Fine)+0.0146 (outside)
SiN Strip 400, SiO₂ abovegroup index2.069.27 × 10⁻⁵−8.66 × 10⁻⁴ (outside)+1.92 × 10⁻⁴ (outside, Fine)−0.0269 (outside)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)dispersion (β₂) (ps²/m)−2.868.82 × 10⁻⁵+0.0289 (outside)+0.00213 (outside, Fine)+1.68 (outside)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)effective index2.391.13 × 10⁻⁵−0.00159 (outside)+4.04 × 10⁻⁵ (outside, Fine)+0.0361 (outside)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)group index4.373.33 × 10⁻⁴−0.00653 (outside)−2.99 × 10⁻⁴ (inside, Fine)−0.134 (outside)
SOI Strip 220, SiO₂ abovedispersion (β₂) (ps²/m)−0.6180.00244+0.00869 (outside)−0.00224 (inside, Fine)+1.91 (outside)
SOI Strip 220, SiO₂ aboveeffective index2.451.57 × 10⁻⁵−0.00133 (outside)+7.31 × 10⁻⁶ (inside, Fine)+0.0461 (outside)
SOI Strip 220, SiO₂ abovegroup index4.205.14 × 10⁻⁴−0.00544 (outside)+3.42 × 10⁻⁵ (inside, Fine)−0.165 (outside)

At the finest mesh we ran, FDE's effective index is within 9.7 × 10⁻⁴ of MPB's value on every silicon, silicon nitride and lithium niobate waveguide here; at Coarse, the default, within 0.0072. Its group index at Fine is within 3.1 × 10⁻⁴ of MPB's value, and its dispersion within 0.66 %, except on the silicon nitride strip in air.

On the silicon nitride strip in air, the dispersion lands near MPB at Coarse and Standard; at Fine it moves away from both; see Limits. On the silicon nitride strip in SiO₂, FDE's dispersion moves toward MPB at each finer level and ends −0.651 % from MPB's value at Fine.

Figure 2. FDE's difference from MPB at Coarse and at the finest level we ran, as a percentage of MPB's value; gray, MPB's own range.
effective indexeffective index, TM0effective index, TM0effective indexgroup indexdispersion (β₂)effective indexgroup indexdispersion (β₂)effective indexeffective indexeffective indexeffective index, TM0effective indexgroup indexdispersion (β₂)effective indexgroup indexdispersion (β₂)SOI Strip 220, single solve at 1550 nmSOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm boxSOI Strip 220, single solve at 1550 nm, the box the tool sizesSOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)SOI Strip 220, SiO₂ aboveSOI RibSlot WaveguideLNOI Rib (x-cut)SiN Strip 400SiN Strip 400, SiO₂ above−10−10⁻²010⁻²10FDE − MPB (% of MPB's value)FineFineFineFineFineFineFineFineFineStandardFineStandardStandardFineFineFineFineFineFine
  • FDE Coarse
  • FDE (finest level run)
  • MPB's range

Which modes each engine calls guided

On the tool's 6 silicon and silicon nitride presets, each engine lists the modes it finds; MPB says which are guided. The words in brackets are the tool's own: FDE prints "Not resolved" when a mode is too close to the cutoff for the mesh to decide, and EIM marks a mode "near cutoff" or "not confined" when its simple model cannot decide.

S14 Wide SOI Strip
w 800 nmt 220 nmSiAirSiO₂500 nm

Si on SiO₂, air above; 800 × 220 nm; 1550 nm

Open this case in the tool
S15 Thin SOI 1310
w 450 nmt 150 nmSiAirSiO₂200 nm

Si on SiO₂, air above; 450 × 150 nm; 1310 nm

Open this case in the tool

Table 5. Which modes each engine calls guided

PresetMPB finds guidedFDE lists (Coarse)EIM lists
SOI Strip 220TE0, TM0TE0, TM0TE0, TM0
Wide SOI StripTE0, TE1, TM0TE0, TE1, TM0TE0, TE1 (near cutoff), TM0
Slot WaveguideTE0, TM0TE0, TM0TE0, TM0, TE1 (near cutoff)
Thin SOI 1310TE0TE0, TM0 (Not resolved)TE0
SOI RibTE0, TE1TE0, TE1 (Not resolved)TE0, TE1 (near cutoff), TM0 (not confined)
SiN Strip 400TE0, TM0TE0, TM0TE0, TM0

Leakage into the substrate, against exact

A silicon waveguide on a thin SiO₂ buffer leaks light into the silicon wafer below. The exact answer exists for a flat slab: a 220 nm silicon layer, a SiO₂ buffer 0.3, 0.5 and 0.7 µm thick, and a silicon substrate, with air or SiO₂ above. FDE's loss at Fine is within 0.25 % of the exact answer at every point, and within 4.1 % at Coarse.

Air / SiO₂Si, n 3.4760t 220 nmSiO₂ buffer 0.3, 0.5 and 0.7 µm, n 1.4440Si substrate, n 3.4760
S5

light leaking into the substrate ↓

λ = 1550 nm

Open a silicon waveguide in the tool

Table 6. Substrate leakage loss, TE, 1550 nm

CoverBuffer (µm)Exact (dB/cm)FDE CoarseFDE StandardFDE FineFDE Fine error
air0.3386393388387+0.105 %
air0.57.457.667.507.46+0.178 %
air0.70.1440.1500.1450.144+0.250 %
SiO₂0.3353359355354+0.0997 %
SiO₂0.56.606.786.656.61+0.170 %
SiO₂0.70.1230.1280.1250.124+0.241 %
Figure 3. Loss of a 220 nm silicon slab leaking through a SiO₂ buffer into a silicon substrate: FDE at three mesh levels against the exact answer (computed to 24 significant figures).
Loss10⁻¹11010010000.30.50.7Buffer thickness (µm)Leakage loss (dB/cm)FDE's error01.002.003.004.000.30.50.7Buffer thickness (µm)FDE − exact (% of exact)
  • Air
  • SiO₂
  • Exact
  • FDE Coarse
  • FDE Standard
  • FDE Fine

Bends, against a full-wave simulation

Meep is a free, open-source electromagnetic simulator from MIT. We used it to simulate a whole ring of each waveguide, using the ring's rotational symmetry to solve the full wave equations, and read the effective index and loss of the bent mode from the ring's resonance. Each radius resonates at its own wavelength, so each comparison is made at that wavelength, with the same constant material indices in both programs.

Meep's range at 1 µm, and for the slot's effective index, is how much its answer changed between its two finest resolutions; at 2.5, 5 and 10 µm it is how far an extrapolation from two resolutions moved its finest answer. For the slot's loss it is the sum of three measured differences, listed in the appendix.

S12
w 500 nmt 220 nmSiAirSiO₂200 nm

A 500 × 220 nm silicon strip on SiO₂, air above, TE, bent to 1, 2.5, 5 and 10 µm.

fixed indices: 3.4777 / 1.4440 / 1.0000

λ = 1527.9 nm

Open a similar design (dispersive materials; this comparison used fixed indices)
S13
w 300 nmgap 100 nmt 220 nmSiAirSiO₂500 nm

Two 300 nm silicon rails with a 100 nm air slot between them, 220 nm high, on SiO₂, air above, TE, bent to 2 and 4.67 µm.

fixed indices: 3.4777 / 1.4440 / 1.0000

λ = 1536.9 nm

Open a similar design (dispersive materials; this comparison used fixed indices)

Table 7. The bent mode's effective index, against Meep

WaveguideR (µm)Wavelength (nm)Meep n_effMeep range (±)FDE − Meep, CoarseStandardFine
strip11527.92.430.00111−0.00170 (outside)−7.38 × 10⁻⁴ (inside)−5.24 × 10⁻⁴ (inside)
strip2.51558.12.380.00112−0.00213 (outside)−6.81 × 10⁻⁴ (inside)−3.49 × 10⁻⁴ (inside)
strip51557.42.380.00114−0.00217 (outside)−6.50 × 10⁻⁴ (inside)−3.08 × 10⁻⁴ (inside)
strip101548.12.390.00116−0.00214 (outside)−6.23 × 10⁻⁴ (inside)−2.74 × 10⁻⁴ (inside)
slot21536.91.830.00213+0.00524 (outside)+9.51 × 10⁻⁴ (inside)−5.46 × 10⁻⁴ (inside)
slot4.671554.41.758.35 × 10⁻⁴+0.00594 (outside)+0.00157 (outside)+2.31 × 10⁻⁵ (inside)

Table 8. Bend loss, dB per 90°

WaveguideR (µm)Wavelength (nm)Meep loss (dB per 90°)Meep range (±)FDE CoarseFDE StandardFDE FineFDE Fine − Meep, % of Meep
strip11527.90.008312.26 × 10⁻⁴0.008690.008440.00836+0.627 % (inside)
slot21536.90.5790.002450.5580.5800.589+1.67 % (outside)
slot4.671554.40.04808.42 × 10⁻⁴0.04240.04690.0486+1.22 % (inside)

On the slot, FDE's effective index agrees with Meep within Meep's own last refinement step. Its loss at Fine lands inside Meep's range at 4.67 µm, +1.22 % against ±1.75 %, and outside it at 2 µm, +1.67 % against ±0.423 %; see Limits. Most of the earlier difference came from how the reference turned the ring's decay into a loss (see the appendix); the difference that remains at 2 µm is not attributed to a cause.

On the strip, FDE at Standard and Fine lands inside Meep's range at every radius, for the effective index and for the loss at 1 µm. At Coarse, the default, its effective index sits 0.00170 to 0.00217 below Meep's value, just outside it.

The strip's loss is compared at 1 µm only. No TM bend is compared on this page.

Figure 4. Bent strip and slot waveguides, FDE at three mesh levels against Meep's simulation of the whole ring, each radius at its own resonant wavelength; bars, Meep's range.
Effective index−2.00 × 10⁻³02.00 × 10⁻³4.00 × 10⁻³6.00 × 10⁻³12.5510Bend radius (µm)FDE − Meep (effective index)1 µm at 1527.9 nm2.5 µm at 1558.1 nm5 µm at 1557.4 nm10 µm at 1548.1 nm2 µm at 1536.9 nmslot 2 µm4.67 µm at 1554.4 nmslot 4.67 µmLoss10⁻³10⁻²10⁻¹1strip 1 µmslot 2 µmslot 4.67 µmBend loss (dB per 90°)1527.9 nm1536.9 nm1554.4 nm
  • Meep
  • FDE Coarse
  • FDE Standard
  • FDE Fine

EIM or FDE: when the free engine is enough

EIM replaces the two-dimensional cross-section by two one-dimensional layer problems. That is exact for a flat layer and approximate for everything else, and it runs instantly in your browser. Table 9 puts EIM and FDE (finest level) against the same references, as a percentage of the reference value.

  • Effective index: EIM is within 0.90 % of MPB on the silicon nitride strips. On silicon strips and ribs it is 1.51 to 3.97 % high, and on the slot 10.6 % high.
  • Group index: EIM is 1.02 % high and 1.31 % low on the two silicon nitride strips, and 3.06 to 3.94 % low on silicon.
  • Dispersion (β₂): do not use EIM's value. It is 65.7 % low on the silicon nitride strip in air and 58.8 % too small in magnitude on the silicon strip in air, and on the silicon strip in SiO₂ it has the wrong sign (+1.29 ps²/m against MPB's −0.618). The tool marks that value whenever it shows it.
  • Bend loss: EIM's bend formula misses the exact bent slab by −53.3 % at 10 µm, −16.8 % at 5 µm and +7.47 % at 3 µm, and Meep's ring by +894 % on the 1 µm strip and by +274 % and −62.2 % on the slot. Use FDE for a bend loss you rely on.
  • Lithium niobate: EIM cannot model the crystal's two indices and gives no value.

Table 9. EIM and FDE against the same references

Waveguide, referenceQuantityReferenceEIMEIM vs referenceFDE (finest) vs reference
slab TE (electric field along the layers), 10 µm radiusbend loss0.005080.00237−53.3 %+0.179 % (Fine)
slab TE (electric field along the layers), 3 µm radiusbend loss1.701.83+7.47 %+0.0474 % (Fine)
slab TE (electric field along the layers), 5 µm radiusbend loss0.3990.332−16.8 %+0.0821 % (Fine)
SOI Strip 220, single solve at 1550 nmeffective index, TE02.392.42+1.51 %+7.29 × 10⁻⁴ % (Fine)
SOI Strip 220, single solve at 1550 nm, the box the tool sizeseffective index, TM01.581.64+3.97 %+0.0555 % (Fine)
SOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm boxeffective index, TM01.581.64+3.96 %+0.0371 % (Fine)
SOI Ribeffective index, TE02.532.57+1.75 %+0.00640 % (Standard)
Slot Waveguideeffective index, TE01.741.92+10.6 %+0.0557 % (Fine)
SiN Strip 400dispersion (β₂) (ps²/m)0.9890.340−65.7 %−1.71 % (Fine)
SiN Strip 400effective index1.571.57+0.0468 %+7.35 × 10⁻⁵ % (Fine)
SiN Strip 400group index2.142.16+1.02 %+0.0143 % (Fine)
SiN Strip 400, SiO₂ abovedispersion (β₂) (ps²/m)1.011.06+5.30 %−0.651 % (Fine)
SiN Strip 400, SiO₂ aboveeffective index1.641.65+0.890 %−3.24 × 10⁻⁴ % (Fine)
SiN Strip 400, SiO₂ abovegroup index2.062.03−1.31 %+0.00935 % (Fine)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)dispersion (β₂) (ps²/m)−2.86−1.18+58.8 %+0.0746 % (Fine)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)effective index2.392.42+1.51 %+0.00169 % (Fine)
SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)group index4.374.24−3.06 %−0.00683 % (Fine)
SOI Strip 220, SiO₂ abovedispersion (β₂) (ps²/m) (EIM sign wrong)−0.6181.29+309 %−0.363 % (Fine)
SOI Strip 220, SiO₂ aboveeffective index2.452.49+1.88 %+2.99 × 10⁻⁴ % (Fine)
SOI Strip 220, SiO₂ abovegroup index4.204.03−3.94 %+8.16 × 10⁻⁴ % (Fine)
slot, TE, 2 µm radiusloss, as the imaginary part of the effective index0.005190.0194+274 %+1.67 % (Fine)
slot, TE, 4.67 µm radiusloss, as the imaginary part of the effective index1.86 × 10⁻⁴7.04 × 10⁻⁵−62.2 %+1.22 % (Fine)
strip, TE, 1 µm radiusloss, as the imaginary part of the effective index1.48 × 10⁻⁴0.00147+894 %+0.627 % (Fine)
Figure 5. How far each engine lands from the reference, as a percentage of it; each reference's own range is in Tables 4, 7 and 8.
SOI Strip 220, single solve at 1550 nmSOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm box, TM0SOI Strip 220, single solve at 1550 nm, the box the tool sizes, TM0SOI RibSlot WaveguideSiN Strip 400SiN Strip 400, SiO₂ aboveSOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)SOI Strip 220, SiO₂ aboveSiN Strip 400SiN Strip 400, SiO₂ aboveSOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)SOI Strip 220, SiO₂ aboveSiN Strip 400SiN Strip 400, SiO₂ aboveSOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂)SOI Strip 220, SiO₂ abovebent slab, R 10 µmbent slab, R 3 µmbent slab, R 5 µmbent slot, R 2 µmbent slot, R 4.67 µmbent strip, R 1 µmEffective indexGroup indexDispersionBend loss10⁻⁴10⁻²1100Difference from the reference (% of its value)
  • EIM
  • FDE (finest level run)
  • sign wrong

Limits

  • Near cutoff. A mode at the edge of being guided is the hardest case. On a thin silicon strip at 1310 nm (Thin SOI 1310), FDE at Coarse lists the TM mode as "Not resolved"; at Standard and Fine it is no longer guided, and MPB agrees it is not guided. The tool withholds a mode it cannot place within its printed accuracy.
  • Differences we have not explained: the remaining loss difference of the bent slot waveguide at 2 µm; the dispersion of the silicon nitride strip in air at Fine, and of the same strip in SiO₂, which ends −0.651 % from MPB's value.
  • Against MPB at Fine. On two silicon waveguides, FDE's effective index at Fine differs from MPB's value by more than the 6e-4 the tool prints for silicon at Fine: +8.77 × 10⁻⁴ on SOI Strip 220's TM mode and +9.69 × 10⁻⁴ on the slot. At Coarse and Standard both sit inside the printed figures. Both are where the field jumps most sharply at a material boundary (the TM mode at the strip's top face, the slot mode across the slot's walls), which is where any solver on a grid, MPB included, converges slowest, so MPB's own range there is probably too narrow. That is our reading, not a measurement.
  • Shapes the tool cannot draw. The flat slabs in the exact-answer and leakage sections ran on FDE's solver directly, not through the tool; their results show the solver's accuracy, not a design you can open.
  • References have their own ranges. MPB's and Meep's ranges are set from their own resolution steps; on the slot's loss, Meep's range also adds the other measured differences listed in the appendix. At 2.5, 5 and 10 µm the strip's Meep range comes from extrapolating two resolutions, with no third to confirm it.
  • The loss of a waveguide you fabricate. Real waveguides lose light to sidewall roughness, which nothing here models.
  • The loss of a bend you fabricate, including the junctions where it meets a straight waveguide.
  • An effective index more precise than your waveguide's fabrication tolerance allows.
  • Accuracy on shapes other than the ones on this page.

Data and how it was produced

Every waveguide the tool can draw ran through the same path a design takes in the tool: the same input checks, the same solver and the same mesh rule. The exact shapes it cannot draw ran on the same solver directly. We ran both engines on October 18, 2026, and ran MPB 1.12.0 and Meep 1.34.0 ourselves at the resolutions each table names; the exact answers were computed with separate code, to 24 significant figures. Every number on this page is read from one data file, whose SHA-256 fingerprint is 934bee1f…, and a separate program recomputes every comparison from its raw values before the page is published.

Download the data file (JSON)

Appendix: every comparison

Every value behind the tables above, at three significant figures; the data file has every digit. In brackets after each FDE value: its error against an exact answer, or its difference from the reference's value and whether it lies inside or outside the reference's range. EIM likewise, or why it has no value.

Silicon slab between SiO₂ layers, in a closed 2 µm box: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE, effective index2.85 (exact)2.85 (−0.00249)2.85 (−6.25 × 10⁻⁴)2.85 (−1.56 × 10⁻⁴)by construction, not evidence
TM, effective index2.02 (exact)2.02 (+0.00760)2.02 (+0.00190)2.02 (+4.74 × 10⁻⁴)by construction, not evidence

Exact answer, computed to 24 significant figures.

220 nm silicon slab on SiO₂, air or SiO₂ above: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
220 nm silicon slab, in air, TE0, dispersion (β₂)0.621 (exact)0.622 (+9.97 × 10⁻⁴)0.621 (+1.07 × 10⁻⁴)0.621 (+5.66 × 10⁻⁶)by construction, not evidence
220 nm silicon slab, in air, TE0, effective index2.83 (exact)2.83 (−0.00271)2.83 (−6.80 × 10⁻⁴)2.83 (−1.70 × 10⁻⁴)by construction, not evidence
220 nm silicon slab, in air, TE0, group index3.59 (exact)3.59 (−0.00471)3.59 (−0.00119)3.59 (−3.02 × 10⁻⁴)by construction, not evidence
220 nm silicon slab, in air, TM0, dispersion (β₂)16.5 (exact)16.1 (−0.428)16.4 (−0.109)16.5 (−0.0299)no value (the exact answer is for the closed box FDE solves in)
220 nm silicon slab, in air, TM0, effective index1.85 (exact)1.86 (+0.00849)1.85 (+0.00212)1.85 (+5.29 × 10⁻⁴)no value (the exact answer is for the closed box FDE solves in)
220 nm silicon slab, in air, TM0, group index4.07 (exact)4.09 (+0.0270)4.07 (+0.00668)4.07 (+0.00153)no value (the exact answer is for the closed box FDE solves in)
220 nm silicon slab, in SiO₂, TE0, dispersion (β₂)0.682 (exact)0.682 (+2.52 × 10⁻⁴)0.682 (−6.35 × 10⁻⁵)0.682 (−3.60 × 10⁻⁵)by construction, not evidence
220 nm silicon slab, in SiO₂, TE0, effective index2.85 (exact)2.85 (−0.00249)2.85 (−6.25 × 10⁻⁴)2.85 (−1.56 × 10⁻⁴)by construction, not evidence
220 nm silicon slab, in SiO₂, TE0, group index3.58 (exact)3.57 (−0.00447)3.58 (−0.00113)3.58 (−2.86 × 10⁻⁴)by construction, not evidence
220 nm silicon slab, in SiO₂, TM0, dispersion (β₂)10.5 (exact)10.3 (−0.229)10.5 (−0.0580)10.5 (−0.0157)no value (the exact answer is for the closed box FDE solves in)
220 nm silicon slab, in SiO₂, TM0, effective index2.02 (exact)2.02 (+0.00760)2.02 (+0.00190)2.02 (+4.74 × 10⁻⁴)no value (the exact answer is for the closed box FDE solves in)
220 nm silicon slab, in SiO₂, TM0, group index3.93 (exact)3.95 (+0.0192)3.94 (+0.00477)3.93 (+0.00113)no value (the exact answer is for the closed box FDE solves in)

Exact answer, computed to 24 significant figures.

Slab of index 2.0, 400 nm wide, bent into an arc: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
slab TE (electric field along the layers), 3 µm radius, bend loss1.70 (exact)1.72 (+0.0137)1.71 (+0.00300)1.70 (+8.08 × 10⁻⁴)1.83 (+0.127)
slab TE (electric field along the layers), 3 µm radius, loss, as the imaginary part of the effective index0.0103 (exact)0.0103 (+8.25 × 10⁻⁵)0.0103 (+1.81 × 10⁻⁵)0.0103 (+4.87 × 10⁻⁶)no value (its bend formula gives loss only)
slab TE (electric field along the layers), 3 µm radius, effective index1.77 (exact)1.77 (−4.15 × 10⁻⁴)1.77 (−1.04 × 10⁻⁴)1.77 (−2.60 × 10⁻⁵)no value (its bend formula gives loss only)
slab TE (electric field along the layers), 5 µm radius, bend loss0.399 (exact)0.405 (+0.00510)0.401 (+0.00131)0.400 (+3.28 × 10⁻⁴)0.332 (−0.0671)
slab TE (electric field along the layers), 5 µm radius, loss, as the imaginary part of the effective index0.00144 (exact)0.00146 (+1.85 × 10⁻⁵)0.00145 (+4.75 × 10⁻⁶)0.00145 (+1.19 × 10⁻⁶)no value (its bend formula gives loss only)
slab TE (electric field along the layers), 5 µm radius, effective index1.76 (exact)1.76 (−4.67 × 10⁻⁴)1.76 (−1.19 × 10⁻⁴)1.76 (−2.98 × 10⁻⁵)no value (its bend formula gives loss only)
slab TE (electric field along the layers), 10 µm radius, bend loss0.00508 (exact)0.00524 (+1.57 × 10⁻⁴)0.00512 (+3.74 × 10⁻⁵)0.00509 (+9.07 × 10⁻⁶)0.00237 (−0.00271)
slab TE (electric field along the layers), 10 µm radius, loss, as the imaginary part of the effective index9.19 × 10⁻⁶ (exact)9.47 × 10⁻⁶ (+2.84 × 10⁻⁷)9.25 × 10⁻⁶ (+6.76 × 10⁻⁸)9.20 × 10⁻⁶ (+1.64 × 10⁻⁸)no value (its bend formula gives loss only)
slab TE (electric field along the layers), 10 µm radius, effective index1.75 (exact)1.75 (−5.37 × 10⁻⁴)1.75 (−1.31 × 10⁻⁴)1.75 (−3.26 × 10⁻⁵)no value (its bend formula gives loss only)

Exact answer, computed to 24 significant figures.

220 nm silicon slab over a SiO₂ buffer on a silicon substrate: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
220 nm silicon slab, in air, 0.3 µm buffer, TE0, leakage loss386 (exact)393 (+6.51)388 (+1.63)387 (+0.407)no value (no substrate leakage)
220 nm silicon slab, in air, 0.3 µm buffer, TE0, loss, as the imaginary part of the effective index0.00110 (exact)0.00112 (+1.85 × 10⁻⁵)0.00110 (+4.62 × 10⁻⁶)0.00110 (+1.16 × 10⁻⁶)no value (no substrate leakage)
220 nm silicon slab, in air, 0.3 µm buffer, TE0, effective index2.83 (exact)2.83 (−0.00270)2.83 (−6.78 × 10⁻⁴)2.83 (−1.70 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in air, 0.5 µm buffer, TE0, leakage loss7.45 (exact)7.66 (+0.213)7.50 (+0.0530)7.46 (+0.0132)no value (no substrate leakage)
220 nm silicon slab, in air, 0.5 µm buffer, TE0, loss, as the imaginary part of the effective index2.12 × 10⁻⁵ (exact)2.18 × 10⁻⁵ (+6.06 × 10⁻⁷)2.13 × 10⁻⁵ (+1.51 × 10⁻⁷)2.12 × 10⁻⁵ (+3.76 × 10⁻⁸)no value (no substrate leakage)
220 nm silicon slab, in air, 0.5 µm buffer, TE0, effective index2.83 (exact)2.83 (−0.00271)2.83 (−6.80 × 10⁻⁴)2.83 (−1.70 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in air, 0.7 µm buffer, TE0, leakage loss0.144 (exact)0.150 (+0.00582)0.145 (+0.00144)0.144 (+3.59 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in air, 0.7 µm buffer, TE0, loss, as the imaginary part of the effective index4.08 × 10⁻⁷ (exact)4.25 × 10⁻⁷ (+1.65 × 10⁻⁸)4.12 × 10⁻⁷ (+4.09 × 10⁻⁹)4.09 × 10⁻⁷ (+1.02 × 10⁻⁹)no value (no substrate leakage)
220 nm silicon slab, in air, 0.7 µm buffer, TE0, effective index2.83 (exact)2.83 (−0.00271)2.83 (−6.80 × 10⁻⁴)2.83 (−1.70 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, leakage loss353 (exact)359 (+5.63)355 (+1.41)354 (+0.352)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, loss, as the imaginary part of the effective index0.00100 (exact)0.00102 (+1.60 × 10⁻⁵)0.00101 (+4.00 × 10⁻⁶)0.00100 (+1.00 × 10⁻⁶)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, effective index2.85 (exact)2.85 (−0.00248)2.85 (−6.23 × 10⁻⁴)2.85 (−1.56 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, leakage loss6.60 (exact)6.78 (+0.181)6.65 (+0.0451)6.61 (+0.0112)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, loss, as the imaginary part of the effective index1.88 × 10⁻⁵ (exact)1.93 × 10⁻⁵ (+5.14 × 10⁻⁷)1.89 × 10⁻⁵ (+1.28 × 10⁻⁷)1.88 × 10⁻⁵ (+3.19 × 10⁻⁸)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, effective index2.85 (exact)2.85 (−0.00249)2.85 (−6.25 × 10⁻⁴)2.85 (−1.56 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, leakage loss0.123 (exact)0.128 (+0.00481)0.125 (+0.00119)0.124 (+2.97 × 10⁻⁴)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, loss, as the imaginary part of the effective index3.50 × 10⁻⁷ (exact)3.64 × 10⁻⁷ (+1.37 × 10⁻⁸)3.54 × 10⁻⁷ (+3.39 × 10⁻⁹)3.51 × 10⁻⁷ (+8.44 × 10⁻¹⁰)no value (no substrate leakage)
220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, effective index2.85 (exact)2.85 (−0.00249)2.85 (−6.25 × 10⁻⁴)2.85 (−1.56 × 10⁻⁴)no value (no substrate leakage)

Exact answer, computed to 24 significant figures.

300 nm lithium niobate slab, crystal axis normal to the film: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TM, effective index1.46 (exact)1.47 (+0.00135)1.46 (+3.67 × 10⁻⁴)1.46 (+9.17 × 10⁻⁵)by construction, not evidence

Exact answer, computed to 24 significant figures.

SOI Strip 220: MPB

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE0, effective index2.39 ± 4.13 × 10⁻⁶2.38 (−0.00183, outside)2.39 (−3.23 × 10⁻⁴, outside)2.39 (+1.74 × 10⁻⁵, outside)2.42 (+0.0361, outside)
TM, in a 3.0 × 4.0 µm window, effective index1.58 ± 2.89 × 10⁻⁵1.59 (+0.00692, outside)1.58 (+0.00198, outside)1.58 (+5.87 × 10⁻⁴, outside)1.64 (+0.0627, outside)
TM0, effective index1.58 ± 6.11 × 10⁻⁵1.59 (+0.00719, outside)1.58 (+0.00226, outside)1.58 (+8.77 × 10⁻⁴, outside)1.64 (+0.0628, outside)

MPB 1.12.0, at 50, 100, 200 and 400 pixels per µm; the range spans its two finest resolutions.

MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.

SOI Rib: MPB

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE0, effective index2.53 ± 1.51 × 10⁻⁶2.53 (−6.86 × 10⁻⁴, outside)2.53 (+1.62 × 10⁻⁴, outside)not run at this level2.57 (+0.0443, outside)

MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.

Slot Waveguide: MPB

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE0, effective index1.74 ± 7.41 × 10⁻⁵1.75 (+0.00693, outside)1.74 (+0.00254, outside)1.74 (+9.69 × 10⁻⁴, outside)1.92 (+0.184, outside)

MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.

LNOI Rib (x-cut): MPB

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE0, effective index1.86 ± 3.54 × 10⁻⁶1.86 (−7.21 × 10⁻⁵, outside)1.86 (+1.13 × 10⁻⁵, outside)not run at this levelno value (cannot model lithium niobate)
TM0, effective index1.85 ± 1.58 × 10⁻⁵1.85 (+8.57 × 10⁻⁴, outside)1.85 (+2.18 × 10⁻⁴, outside)not run at this levelno value (cannot model lithium niobate)

MPB 1.12.0, at 50, 100 and 200 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.

Strips over 1500 to 1600 nm: MPB

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
silicon nitride strip, in air, dispersion (β₂)0.989 ± 4.94 × 10⁻⁴0.991 (+0.00256, outside)0.992 (+0.00333, outside)0.972 (−0.0169, outside)0.340 (−0.649, outside)
silicon nitride strip, in air, effective index1.57 ± 1.84 × 10⁻⁵1.57 (−2.55 × 10⁻⁴, outside)1.57 (−3.22 × 10⁻⁵, outside)1.57 (+1.15 × 10⁻⁶, inside)1.57 (+7.35 × 10⁻⁴, outside)
silicon nitride strip, in air, group index2.14 ± 1.36 × 10⁻⁴2.13 (−0.00191, outside)2.14 (−3.80 × 10⁻⁴, outside)2.14 (+3.04 × 10⁻⁴, outside)2.16 (+0.0218, outside)
silicon nitride strip, in SiO₂, dispersion (β₂)1.01 ± 1.78 × 10⁻⁵0.999 (−0.0102, outside)1.00 (−0.00723, outside)1.00 (−0.00657, outside)1.06 (+0.0535, outside)
silicon nitride strip, in SiO₂, effective index1.64 ± 1.16 × 10⁻⁵1.64 (−1.98 × 10⁻⁴, outside)1.64 (−4.14 × 10⁻⁵, outside)1.64 (−5.30 × 10⁻⁶, inside)1.65 (+0.0146, outside)
silicon nitride strip, in SiO₂, group index2.06 ± 9.27 × 10⁻⁵2.05 (−8.66 × 10⁻⁴, outside)2.06 (−2.14 × 10⁻⁵, inside)2.06 (+1.92 × 10⁻⁴, outside)2.03 (−0.0269, outside)
silicon strip, in air, dispersion (β₂)−2.86 ± 8.82 × 10⁻⁵−2.83 (+0.0289, outside)not run at this level−2.85 (+0.00213, outside)−1.18 (+1.68, outside)
silicon strip, in air, effective index2.39 ± 1.13 × 10⁻⁵2.38 (−0.00159, outside)not run at this level2.39 (+4.04 × 10⁻⁵, outside)2.42 (+0.0361, outside)
silicon strip, in air, group index4.37 ± 3.33 × 10⁻⁴4.36 (−0.00653, outside)not run at this level4.37 (−2.99 × 10⁻⁴, inside)4.24 (−0.134, outside)
silicon strip, in SiO₂, dispersion (β₂)−0.618 ± 0.00244−0.609 (+0.00869, outside)not run at this level−0.620 (−0.00224, inside)1.29 (+1.91, outside)
silicon strip, in SiO₂, effective index2.45 ± 1.57 × 10⁻⁵2.45 (−0.00133, outside)not run at this level2.45 (+7.31 × 10⁻⁶, inside)2.49 (+0.0461, outside)
silicon strip, in SiO₂, group index4.20 ± 5.14 × 10⁻⁴4.19 (−0.00544, outside)not run at this level4.20 (+3.42 × 10⁻⁵, inside)4.03 (−0.165, outside)

MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.

MPB 1.12.0, at 50, 100 and 200 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.

MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its two finest resolutions.

Bent strip and slot waveguides: Meep

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
slot, TE, 2 µm radius, loss, as the imaginary part of the effective index0.00519 ± 2.19 × 10⁻⁵0.00500 (−1.90 × 10⁻⁴, outside)0.00520 (+1.42 × 10⁻⁵, inside)0.00528 (+8.69 × 10⁻⁵, outside)0.0194 (+0.0142, outside)
slot, TE, 2 µm radius, effective index1.83 ± 0.002131.84 (+0.00524, outside)1.83 (+9.51 × 10⁻⁴, inside)1.83 (−5.46 × 10⁻⁴, inside)no value (its bend formula gives loss only)
slot, TE, 4.67 µm radius, loss, as the imaginary part of the effective index1.86 × 10⁻⁴ ± 3.27 × 10⁻⁶1.65 × 10⁻⁴ (−2.16 × 10⁻⁵, outside)1.82 × 10⁻⁴ (−4.13 × 10⁻⁶, outside)1.89 × 10⁻⁴ (+2.27 × 10⁻⁶, inside)7.04 × 10⁻⁵ (−1.16 × 10⁻⁴, outside)
slot, TE, 4.67 µm radius, effective index1.75 ± 8.35 × 10⁻⁴1.75 (+0.00594, outside)1.75 (+0.00157, outside)1.75 (+2.31 × 10⁻⁵, inside)no value (its bend formula gives loss only)
strip, TE, 1 µm radius, loss, as the imaginary part of the effective index1.48 × 10⁻⁴ ± 4.03 × 10⁻⁶1.55 × 10⁻⁴ (+6.76 × 10⁻⁶, outside)1.51 × 10⁻⁴ (+2.42 × 10⁻⁶, inside)1.49 × 10⁻⁴ (+9.29 × 10⁻⁷, inside)0.00147 (+0.00132, outside)
strip, TE, 1 µm radius, effective index2.43 ± 0.001112.43 (−0.00170, outside)2.43 (−7.38 × 10⁻⁴, inside)2.43 (−5.24 × 10⁻⁴, inside)no value (its bend formula gives loss only)
strip, TE, 2.5 µm radius, effective index2.38 ± 0.001122.38 (−0.00213, outside)2.38 (−6.81 × 10⁻⁴, inside)2.38 (−3.49 × 10⁻⁴, inside)no value (its bend formula gives loss only)
strip, TE, 5 µm radius, effective index2.38 ± 0.001142.38 (−0.00217, outside)2.38 (−6.50 × 10⁻⁴, inside)2.38 (−3.08 × 10⁻⁴, inside)no value (its bend formula gives loss only)
strip, TE, 10 µm radius, effective index2.39 ± 0.001162.39 (−0.00214, outside)2.39 (−6.23 × 10⁻⁴, inside)2.39 (−2.74 × 10⁻⁴, inside)no value (its bend formula gives loss only)

Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 300 pixels per µm; the ring's decay is turned into a loss along the waveguide with Meep's own group index at the operating wavelength, and the range is the sum of three measured differences: the group index's change over the last grid refinement, the difference between the 3-point and 5-point group-index estimates and the loss's change over the last grid refinement.

Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the range is how much its answer changed from 100 to 200 pixels per µm.

Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the ring's decay is turned into a loss along the waveguide with Meep's own group index at the operating wavelength, and the range is the sum of three measured differences: the group index's change over the last grid refinement, the difference between the 3-point and 5-point group-index estimates and the loss's change over the last grid refinement.

The slot's loss reference was revised: the earlier conversion from the ring's decay to a loss along the waveguide took the group index from two neighboring ring orders on the coarsest grid, an average over 47.2 nm at 2 µm and 22.1 nm at 4.67 µm on one side of the wavelength, which read it 2.76 % and 1.07 % low. Meep's own group index at the operating wavelength moves the reference by +2.69 % at 2 µm and +1.08 % at 4.67 µm.

Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the range is how much its answer changed from 100 to 200 pixels per µm. The range also includes the uncertainty of the group index used to turn the ring's decay into a loss along the waveguide.

Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 50 and 100 pixels per µm, extrapolated from those two resolutions; the range is how far that extrapolation moved its finest result.

Corrections confirmed

A correction to FDE's bend grid, confirmed: the loss of a 220 nm silicon strip's TM mode bent at 10 µm, at Standard, is reproduced exactly as recorded when the correction was made.

A correction to how FDE maps a bend, before and after: the loss of SOI Strip 220's TE mode at 1 µm radius and 1550 nm, at each mesh level.

LevelCell size (nm)Loss before the correction (dB per 90°)Loss now (dB per 90°)
Coarse200.009170.0118
Standard100.008920.0115
Fine5not recorded0.0114