Benchmark
PIC Waveguide Mode Solver: benchmark
How accurate is it? The PIC Waveguide Mode Solver finds the guided modes of an optical waveguide's cross-section: the effective index, the group index and dispersion, and the loss when the waveguide bends or leaks into the substrate. It has two engines. EIM ("Effective index" in the tool's engine menu), the effective index method, is free and runs in your browser. FDE ("Full-vectorial" in the menu), a finite-difference mode solver that keeps every field component, is paid and runs on our servers, at three mesh levels: Coarse (the default), Standard and Fine. This page measures both against exact answers and against two free, independent programs, MPB and Meep, which we ran ourselves.
Short answer: on every exact test, FDE's effective index is within the accuracy the tool prints at each mesh level. Against an independent mode solver it agrees to within 0.0072 at the default Coarse mesh and 9.7 × 10⁻⁴ at the finest mesh we ran; on two silicon waveguides the difference at Fine is larger than the 6e-4 the tool prints, and we have not found why.
Summary
- Exact answers. On 16 modes of shapes whose answer is known exactly, FDE's effective index stays within the accuracy the tool prints at every mesh level: 48 of 48 comparisons.
- Independent mode solver. On 19 values from common silicon, silicon nitride and lithium niobate waveguides, FDE at its finest mesh differs from MPB by 0.00935 % typically and 1.71 % at most, for how a pulse spreads on a silicon nitride strip in air; see Limits. On 6 of the 19 it lands inside MPB's own range.
- Full-wave simulation of bends. On silicon strip and slot waveguides bent to radii from 1 to 10 µm, FDE at its finest mesh lands inside Meep's range on 8 of 9 values. The one outside is the loss of the bent slot waveguide at 2 µm, +1.67 % from Meep's value where Meep's own range is ±0.423 %; at 4.67 µm it lands inside, +1.22 % against ±1.75 %; see Limits.
- Where the free engine falls short. Outside flat layers, where it is exact by construction, EIM lands outside the reference on all 23 values, furthest for loss in a bend and for how a pulse spreads; on a silicon strip in SiO₂ it gets the sign of the dispersion wrong. When EIM is enough
On every value where both engines give a number, FDE at its finest mesh is at least as close to the reference as EIM.
An independent program's answer also shifts a little with its own settings. Its range is that shift at its finest settings, and the record prints every difference, inside it or outside it.
Against exact answers: how the error shrinks with the mesh
Some waveguides have answers that follow from an exact equation: flat slabs, a slab bent into an arc, and a slab that leaks into a substrate. We solve each one with FDE at its three mesh levels and compare with the exact answer, computed to 24 significant figures. For each material the tool prints how accurate its effective index is at each level. Figure 1 puts that printed accuracy, dashed, over the error we measure here.
A 220 nm silicon slab on SiO₂, with air or SiO₂ above, at 1550 nm. For TM, the exact answer is for the slab inside the same closed 2 µm box FDE solves in.
A slab of index 2.0, 400 nm wide, in SiO₂, bent into an arc of 10, 5 and 3 µm radius, with the electric field out of the plane of the bend.
It is held to the accuracy the tool prints for silicon nitride.
A 300 nm lithium niobate film on SiO₂, air above, crystal axis normal to the film, TM mode, inside a closed 2 × 10.48 µm box.
n_o 2.2111, n_e 2.1376
(a) Silicon
(b) Bent slab of index 2.0, held to the silicon nitride accuracy
(c) Lithium niobate
- slab in a closed box
- slab, air above
- slab, SiO₂ above
- slab on a buffer, air above
- slab on a buffer, SiO₂ above
- TE
- TM
- E ⊙
- Accuracy the tool prints
Table 1. Accuracy the tool prints for FDE's effective index, by material and mesh level
| Material | Coarse | Standard | Fine |
|---|---|---|---|
| silicon | 9e-3 | 3e-3 | 6e-4 |
| silicon nitride | 2e-3 | 3e-4 | 8e-5 |
| lithium niobate | 2e-3 | 4e-4 | 1e-4 |
| InGaAsP (Q1.25) | 9e-5 | 3e-5 | 6e-6 |
Each figure is how far FDE's answer at that level is from its own answer on finer meshes, measured on waveguides of that material and rounded up to one significant figure. It is not a comparison with another program; the sections below are. For lithium niobate, see the note below. No shape on this page is made of InGaAsP, so its figure is not tested here.
Lithium niobate. Its printed figure at each level is the larger of two measurements: the tool's lithium niobate rib preset, and the flat lithium niobate slab in the exact-answer section. At Fine, checking the slab against a finer mesh needs more memory than a solve may use, so its Fine figure is measured against the value its Standard and Fine results extrapolate to, assuming the error shrinks as the square of the cell size.
Table 2. Largest error measured here, with the cell size each level used
| Material (modes) | Coarse | Standard | Fine |
|---|---|---|---|
| silicon (12) | 0.00849 at 20.0 nm (prints 9e-3) | 0.00212 at 10.0 nm (prints 3e-3) | 5.29 × 10⁻⁴ at 5.0 nm (prints 6e-4) |
| silicon nitride (3) | 5.37 × 10⁻⁴ at 34.8 nm (prints 2e-3) | 1.31 × 10⁻⁴ at 17.4 nm (prints 3e-4) | 3.26 × 10⁻⁵ at 8.7 nm (prints 8e-5) |
| lithium niobate (1) | 0.00135 at 31.5 nm (prints 2e-3) | 3.67 × 10⁻⁴ at 15.7 nm (prints 4e-4) | 9.17 × 10⁻⁵ at 7.9 nm (prints 1e-4) |
Table 3. Group index and dispersion on the silicon slab, against the exact answer
| Slab | Quantity | Exact | FDE error, Coarse | Standard | Fine |
|---|---|---|---|---|---|
| 220 nm Si, air above, TE | dispersion (β₂) (ps²/m) | 0.621 | +0.161 % | +0.0173 % | +9.12 × 10⁻⁴ % |
| 220 nm Si, air above, TE | group index | 3.59 | −0.131 % | −0.0332 % | −0.00840 % |
| 220 nm Si, air above, TM | dispersion (β₂) (ps²/m) | 16.5 | −2.59 % | −0.658 % | −0.181 % |
| 220 nm Si, air above, TM | group index | 4.07 | +0.665 % | +0.164 % | +0.0377 % |
| 220 nm Si, SiO₂ above, TE | dispersion (β₂) (ps²/m) | 0.682 | +0.0370 % | −0.00931 % | −0.00528 % |
| 220 nm Si, SiO₂ above, TE | group index | 3.58 | −0.125 % | −0.0316 % | −0.00799 % |
| 220 nm Si, SiO₂ above, TM | dispersion (β₂) (ps²/m) | 10.5 | −2.18 % | −0.551 % | −0.149 % |
| 220 nm Si, SiO₂ above, TM | group index | 3.93 | +0.489 % | +0.121 % | +0.0286 % |
On these slabs FDE's group index is within 0.038 % of the exact answer at Fine and within 0.67 % at Coarse; its dispersion is within 0.19 % at Fine and 2.6 % at Coarse.
Common waveguides against MPB
MPB is a free, open-source mode solver from MIT. We solved the tool's preset waveguides with it at resolutions up to 400 pixels per µm. Its range is how much its answer still moves at its finest settings. Table 4 lists the effective index, group index and dispersion β₂; Figure 2 shows FDE's difference from MPB at Coarse and at the finest level we ran.
Si on SiO₂, air above; 500 × 220 nm; 1550 nm
Si 3.4777, SiO₂ 1.4440, air 1.0000
Si on SiO₂, SiO₂ above; 500 × 220 nm; 1550 nm
Si 3.4777, SiO₂ 1.4440
Si rib on SiO₂, air above; 500 nm wide, 220 nm thick, 90 nm slab; 1550 nm
Si rails 300 nm wide with a 100 nm slot, 220 nm high, on SiO₂, air above; 1550 nm
LiNbO₃ rib, x-cut, in SiO₂; 800 nm wide, 600 nm film, 250 nm slab; 1550 nm
Si₃N₄ on SiO₂, air above; 1000 × 400 nm; 1550 nm
Si₃N₄ on SiO₂, SiO₂ above; 1000 × 400 nm; 1550 nm
Si₃N₄ 1.9963, SiO₂ 1.4440
Table 4. FDE and EIM against MPB
| Waveguide | Quantity | MPB value | MPB range (±) | FDE − MPB, Coarse | FDE − MPB, finest level run | EIM − MPB |
|---|---|---|---|---|---|---|
| SOI Strip 220, single solve at 1550 nm | effective index, TE0 | 2.39 | 4.13 × 10⁻⁶ | −0.00183 (outside) | +1.74 × 10⁻⁵ (outside, Fine) | +0.0361 (outside) |
| SOI Strip 220, single solve at 1550 nm, the box the tool sizes | effective index, TM0 | 1.58 | 6.11 × 10⁻⁵ | +0.00719 (outside) | +8.77 × 10⁻⁴ (outside, Fine) | +0.0628 (outside) |
| SOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm box | effective index, TM0 | 1.58 | 2.89 × 10⁻⁵ | +0.00692 (outside) | +5.87 × 10⁻⁴ (outside, Fine) | +0.0627 (outside) |
| SOI Rib | effective index, TE0 | 2.53 | 1.51 × 10⁻⁶ | −6.86 × 10⁻⁴ (outside) | +1.62 × 10⁻⁴ (outside, Standard) | +0.0443 (outside) |
| Slot Waveguide | effective index, TE0 | 1.74 | 7.41 × 10⁻⁵ | +0.00693 (outside) | +9.69 × 10⁻⁴ (outside, Fine) | +0.184 (outside) |
| LNOI Rib (x-cut) | effective index, TE0 | 1.86 | 3.54 × 10⁻⁶ | −7.21 × 10⁻⁵ (outside) | +1.13 × 10⁻⁵ (outside, Standard) | no value |
| LNOI Rib (x-cut) | effective index, TM0 | 1.85 | 1.58 × 10⁻⁵ | +8.57 × 10⁻⁴ (outside) | +2.18 × 10⁻⁴ (outside, Standard) | no value |
| SiN Strip 400 | dispersion (β₂) (ps²/m) | 0.989 | 4.94 × 10⁻⁴ | +0.00256 (outside) | −0.0169 (outside, Fine) | −0.649 (outside) |
| SiN Strip 400 | effective index | 1.57 | 1.84 × 10⁻⁵ | −2.55 × 10⁻⁴ (outside) | +1.15 × 10⁻⁶ (inside, Fine) | +7.35 × 10⁻⁴ (outside) |
| SiN Strip 400 | group index | 2.14 | 1.36 × 10⁻⁴ | −0.00191 (outside) | +3.04 × 10⁻⁴ (outside, Fine) | +0.0218 (outside) |
| SiN Strip 400, SiO₂ above | dispersion (β₂) (ps²/m) | 1.01 | 1.78 × 10⁻⁵ | −0.0102 (outside) | −0.00657 (outside, Fine) | +0.0535 (outside) |
| SiN Strip 400, SiO₂ above | effective index | 1.64 | 1.16 × 10⁻⁵ | −1.98 × 10⁻⁴ (outside) | −5.30 × 10⁻⁶ (inside, Fine) | +0.0146 (outside) |
| SiN Strip 400, SiO₂ above | group index | 2.06 | 9.27 × 10⁻⁵ | −8.66 × 10⁻⁴ (outside) | +1.92 × 10⁻⁴ (outside, Fine) | −0.0269 (outside) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | dispersion (β₂) (ps²/m) | −2.86 | 8.82 × 10⁻⁵ | +0.0289 (outside) | +0.00213 (outside, Fine) | +1.68 (outside) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | effective index | 2.39 | 1.13 × 10⁻⁵ | −0.00159 (outside) | +4.04 × 10⁻⁵ (outside, Fine) | +0.0361 (outside) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | group index | 4.37 | 3.33 × 10⁻⁴ | −0.00653 (outside) | −2.99 × 10⁻⁴ (inside, Fine) | −0.134 (outside) |
| SOI Strip 220, SiO₂ above | dispersion (β₂) (ps²/m) | −0.618 | 0.00244 | +0.00869 (outside) | −0.00224 (inside, Fine) | +1.91 (outside) |
| SOI Strip 220, SiO₂ above | effective index | 2.45 | 1.57 × 10⁻⁵ | −0.00133 (outside) | +7.31 × 10⁻⁶ (inside, Fine) | +0.0461 (outside) |
| SOI Strip 220, SiO₂ above | group index | 4.20 | 5.14 × 10⁻⁴ | −0.00544 (outside) | +3.42 × 10⁻⁵ (inside, Fine) | −0.165 (outside) |
At the finest mesh we ran, FDE's effective index is within 9.7 × 10⁻⁴ of MPB's value on every silicon, silicon nitride and lithium niobate waveguide here; at Coarse, the default, within 0.0072. Its group index at Fine is within 3.1 × 10⁻⁴ of MPB's value, and its dispersion within 0.66 %, except on the silicon nitride strip in air.
On the silicon nitride strip in air, the dispersion lands near MPB at Coarse and Standard; at Fine it moves away from both; see Limits. On the silicon nitride strip in SiO₂, FDE's dispersion moves toward MPB at each finer level and ends −0.651 % from MPB's value at Fine.
- FDE Coarse
- FDE (finest level run)
- MPB's range
Which modes each engine calls guided
On the tool's 6 silicon and silicon nitride presets, each engine lists the modes it finds; MPB says which are guided. The words in brackets are the tool's own: FDE prints "Not resolved" when a mode is too close to the cutoff for the mesh to decide, and EIM marks a mode "near cutoff" or "not confined" when its simple model cannot decide.
Si on SiO₂, air above; 800 × 220 nm; 1550 nm
Si on SiO₂, air above; 450 × 150 nm; 1310 nm
Table 5. Which modes each engine calls guided
| Preset | MPB finds guided | FDE lists (Coarse) | EIM lists |
|---|---|---|---|
| SOI Strip 220 | TE0, TM0 | TE0, TM0 | TE0, TM0 |
| Wide SOI Strip | TE0, TE1, TM0 | TE0, TE1, TM0 | TE0, TE1 (near cutoff), TM0 |
| Slot Waveguide | TE0, TM0 | TE0, TM0 | TE0, TM0, TE1 (near cutoff) |
| Thin SOI 1310 | TE0 | TE0, TM0 (Not resolved) | TE0 |
| SOI Rib | TE0, TE1 | TE0, TE1 (Not resolved) | TE0, TE1 (near cutoff), TM0 (not confined) |
| SiN Strip 400 | TE0, TM0 | TE0, TM0 | TE0, TM0 |
Leakage into the substrate, against exact
A silicon waveguide on a thin SiO₂ buffer leaks light into the silicon wafer below. The exact answer exists for a flat slab: a 220 nm silicon layer, a SiO₂ buffer 0.3, 0.5 and 0.7 µm thick, and a silicon substrate, with air or SiO₂ above. FDE's loss at Fine is within 0.25 % of the exact answer at every point, and within 4.1 % at Coarse.
Table 6. Substrate leakage loss, TE, 1550 nm
| Cover | Buffer (µm) | Exact (dB/cm) | FDE Coarse | FDE Standard | FDE Fine | FDE Fine error |
|---|---|---|---|---|---|---|
| air | 0.3 | 386 | 393 | 388 | 387 | +0.105 % |
| air | 0.5 | 7.45 | 7.66 | 7.50 | 7.46 | +0.178 % |
| air | 0.7 | 0.144 | 0.150 | 0.145 | 0.144 | +0.250 % |
| SiO₂ | 0.3 | 353 | 359 | 355 | 354 | +0.0997 % |
| SiO₂ | 0.5 | 6.60 | 6.78 | 6.65 | 6.61 | +0.170 % |
| SiO₂ | 0.7 | 0.123 | 0.128 | 0.125 | 0.124 | +0.241 % |
- Air
- SiO₂
- Exact
- FDE Coarse
- FDE Standard
- FDE Fine
Bends, against a full-wave simulation
Meep is a free, open-source electromagnetic simulator from MIT. We used it to simulate a whole ring of each waveguide, using the ring's rotational symmetry to solve the full wave equations, and read the effective index and loss of the bent mode from the ring's resonance. Each radius resonates at its own wavelength, so each comparison is made at that wavelength, with the same constant material indices in both programs.
Meep's range at 1 µm, and for the slot's effective index, is how much its answer changed between its two finest resolutions; at 2.5, 5 and 10 µm it is how far an extrapolation from two resolutions moved its finest answer. For the slot's loss it is the sum of three measured differences, listed in the appendix.
A 500 × 220 nm silicon strip on SiO₂, air above, TE, bent to 1, 2.5, 5 and 10 µm.
fixed indices: 3.4777 / 1.4440 / 1.0000
λ = 1527.9 nm
Two 300 nm silicon rails with a 100 nm air slot between them, 220 nm high, on SiO₂, air above, TE, bent to 2 and 4.67 µm.
fixed indices: 3.4777 / 1.4440 / 1.0000
λ = 1536.9 nm
Table 7. The bent mode's effective index, against Meep
| Waveguide | R (µm) | Wavelength (nm) | Meep n_eff | Meep range (±) | FDE − Meep, Coarse | Standard | Fine |
|---|---|---|---|---|---|---|---|
| strip | 1 | 1527.9 | 2.43 | 0.00111 | −0.00170 (outside) | −7.38 × 10⁻⁴ (inside) | −5.24 × 10⁻⁴ (inside) |
| strip | 2.5 | 1558.1 | 2.38 | 0.00112 | −0.00213 (outside) | −6.81 × 10⁻⁴ (inside) | −3.49 × 10⁻⁴ (inside) |
| strip | 5 | 1557.4 | 2.38 | 0.00114 | −0.00217 (outside) | −6.50 × 10⁻⁴ (inside) | −3.08 × 10⁻⁴ (inside) |
| strip | 10 | 1548.1 | 2.39 | 0.00116 | −0.00214 (outside) | −6.23 × 10⁻⁴ (inside) | −2.74 × 10⁻⁴ (inside) |
| slot | 2 | 1536.9 | 1.83 | 0.00213 | +0.00524 (outside) | +9.51 × 10⁻⁴ (inside) | −5.46 × 10⁻⁴ (inside) |
| slot | 4.67 | 1554.4 | 1.75 | 8.35 × 10⁻⁴ | +0.00594 (outside) | +0.00157 (outside) | +2.31 × 10⁻⁵ (inside) |
Table 8. Bend loss, dB per 90°
| Waveguide | R (µm) | Wavelength (nm) | Meep loss (dB per 90°) | Meep range (±) | FDE Coarse | FDE Standard | FDE Fine | FDE Fine − Meep, % of Meep |
|---|---|---|---|---|---|---|---|---|
| strip | 1 | 1527.9 | 0.00831 | 2.26 × 10⁻⁴ | 0.00869 | 0.00844 | 0.00836 | +0.627 % (inside) |
| slot | 2 | 1536.9 | 0.579 | 0.00245 | 0.558 | 0.580 | 0.589 | +1.67 % (outside) |
| slot | 4.67 | 1554.4 | 0.0480 | 8.42 × 10⁻⁴ | 0.0424 | 0.0469 | 0.0486 | +1.22 % (inside) |
On the slot, FDE's effective index agrees with Meep within Meep's own last refinement step. Its loss at Fine lands inside Meep's range at 4.67 µm, +1.22 % against ±1.75 %, and outside it at 2 µm, +1.67 % against ±0.423 %; see Limits. Most of the earlier difference came from how the reference turned the ring's decay into a loss (see the appendix); the difference that remains at 2 µm is not attributed to a cause.
On the strip, FDE at Standard and Fine lands inside Meep's range at every radius, for the effective index and for the loss at 1 µm. At Coarse, the default, its effective index sits 0.00170 to 0.00217 below Meep's value, just outside it.
The strip's loss is compared at 1 µm only. No TM bend is compared on this page.
- Meep
- FDE Coarse
- FDE Standard
- FDE Fine
EIM or FDE: when the free engine is enough
EIM replaces the two-dimensional cross-section by two one-dimensional layer problems. That is exact for a flat layer and approximate for everything else, and it runs instantly in your browser. Table 9 puts EIM and FDE (finest level) against the same references, as a percentage of the reference value.
- Effective index: EIM is within 0.90 % of MPB on the silicon nitride strips. On silicon strips and ribs it is 1.51 to 3.97 % high, and on the slot 10.6 % high.
- Group index: EIM is 1.02 % high and 1.31 % low on the two silicon nitride strips, and 3.06 to 3.94 % low on silicon.
- Dispersion (β₂): do not use EIM's value. It is 65.7 % low on the silicon nitride strip in air and 58.8 % too small in magnitude on the silicon strip in air, and on the silicon strip in SiO₂ it has the wrong sign (+1.29 ps²/m against MPB's −0.618). The tool marks that value whenever it shows it.
- Bend loss: EIM's bend formula misses the exact bent slab by −53.3 % at 10 µm, −16.8 % at 5 µm and +7.47 % at 3 µm, and Meep's ring by +894 % on the 1 µm strip and by +274 % and −62.2 % on the slot. Use FDE for a bend loss you rely on.
- Lithium niobate: EIM cannot model the crystal's two indices and gives no value.
Table 9. EIM and FDE against the same references
| Waveguide, reference | Quantity | Reference | EIM | EIM vs reference | FDE (finest) vs reference |
|---|---|---|---|---|---|
| slab TE (electric field along the layers), 10 µm radius | bend loss | 0.00508 | 0.00237 | −53.3 % | +0.179 % (Fine) |
| slab TE (electric field along the layers), 3 µm radius | bend loss | 1.70 | 1.83 | +7.47 % | +0.0474 % (Fine) |
| slab TE (electric field along the layers), 5 µm radius | bend loss | 0.399 | 0.332 | −16.8 % | +0.0821 % (Fine) |
| SOI Strip 220, single solve at 1550 nm | effective index, TE0 | 2.39 | 2.42 | +1.51 % | +7.29 × 10⁻⁴ % (Fine) |
| SOI Strip 220, single solve at 1550 nm, the box the tool sizes | effective index, TM0 | 1.58 | 1.64 | +3.97 % | +0.0555 % (Fine) |
| SOI Strip 220, single solve at 1550 nm, a fixed 3.0 × 4.0 µm box | effective index, TM0 | 1.58 | 1.64 | +3.96 % | +0.0371 % (Fine) |
| SOI Rib | effective index, TE0 | 2.53 | 2.57 | +1.75 % | +0.00640 % (Standard) |
| Slot Waveguide | effective index, TE0 | 1.74 | 1.92 | +10.6 % | +0.0557 % (Fine) |
| SiN Strip 400 | dispersion (β₂) (ps²/m) | 0.989 | 0.340 | −65.7 % | −1.71 % (Fine) |
| SiN Strip 400 | effective index | 1.57 | 1.57 | +0.0468 % | +7.35 × 10⁻⁵ % (Fine) |
| SiN Strip 400 | group index | 2.14 | 2.16 | +1.02 % | +0.0143 % (Fine) |
| SiN Strip 400, SiO₂ above | dispersion (β₂) (ps²/m) | 1.01 | 1.06 | +5.30 % | −0.651 % (Fine) |
| SiN Strip 400, SiO₂ above | effective index | 1.64 | 1.65 | +0.890 % | −3.24 × 10⁻⁴ % (Fine) |
| SiN Strip 400, SiO₂ above | group index | 2.06 | 2.03 | −1.31 % | +0.00935 % (Fine) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | dispersion (β₂) (ps²/m) | −2.86 | −1.18 | +58.8 % | +0.0746 % (Fine) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | effective index | 2.39 | 2.42 | +1.51 % | +0.00169 % (Fine) |
| SOI Strip 220, 1500 to 1600 nm sweep (the run behind n_g and β₂) | group index | 4.37 | 4.24 | −3.06 % | −0.00683 % (Fine) |
| SOI Strip 220, SiO₂ above | dispersion (β₂) (ps²/m) (EIM sign wrong) | −0.618 | 1.29 | +309 % | −0.363 % (Fine) |
| SOI Strip 220, SiO₂ above | effective index | 2.45 | 2.49 | +1.88 % | +2.99 × 10⁻⁴ % (Fine) |
| SOI Strip 220, SiO₂ above | group index | 4.20 | 4.03 | −3.94 % | +8.16 × 10⁻⁴ % (Fine) |
| slot, TE, 2 µm radius | loss, as the imaginary part of the effective index | 0.00519 | 0.0194 | +274 % | +1.67 % (Fine) |
| slot, TE, 4.67 µm radius | loss, as the imaginary part of the effective index | 1.86 × 10⁻⁴ | 7.04 × 10⁻⁵ | −62.2 % | +1.22 % (Fine) |
| strip, TE, 1 µm radius | loss, as the imaginary part of the effective index | 1.48 × 10⁻⁴ | 0.00147 | +894 % | +0.627 % (Fine) |
- EIM
- FDE (finest level run)
- sign wrong
Limits
- Near cutoff. A mode at the edge of being guided is the hardest case. On a thin silicon strip at 1310 nm (Thin SOI 1310), FDE at Coarse lists the TM mode as "Not resolved"; at Standard and Fine it is no longer guided, and MPB agrees it is not guided. The tool withholds a mode it cannot place within its printed accuracy.
- Differences we have not explained: the remaining loss difference of the bent slot waveguide at 2 µm; the dispersion of the silicon nitride strip in air at Fine, and of the same strip in SiO₂, which ends −0.651 % from MPB's value.
- Against MPB at Fine. On two silicon waveguides, FDE's effective index at Fine differs from MPB's value by more than the 6e-4 the tool prints for silicon at Fine: +8.77 × 10⁻⁴ on SOI Strip 220's TM mode and +9.69 × 10⁻⁴ on the slot. At Coarse and Standard both sit inside the printed figures. Both are where the field jumps most sharply at a material boundary (the TM mode at the strip's top face, the slot mode across the slot's walls), which is where any solver on a grid, MPB included, converges slowest, so MPB's own range there is probably too narrow. That is our reading, not a measurement.
- Shapes the tool cannot draw. The flat slabs in the exact-answer and leakage sections ran on FDE's solver directly, not through the tool; their results show the solver's accuracy, not a design you can open.
- References have their own ranges. MPB's and Meep's ranges are set from their own resolution steps; on the slot's loss, Meep's range also adds the other measured differences listed in the appendix. At 2.5, 5 and 10 µm the strip's Meep range comes from extrapolating two resolutions, with no third to confirm it.
- The loss of a waveguide you fabricate. Real waveguides lose light to sidewall roughness, which nothing here models.
- The loss of a bend you fabricate, including the junctions where it meets a straight waveguide.
- An effective index more precise than your waveguide's fabrication tolerance allows.
- Accuracy on shapes other than the ones on this page.
Data and how it was produced
Every waveguide the tool can draw ran through the same path a design takes in the tool: the same input checks, the same solver and the same mesh rule. The exact shapes it cannot draw ran on the same solver directly. We ran both engines on October 18, 2026, and ran MPB 1.12.0 and Meep 1.34.0 ourselves at the resolutions each table names; the exact answers were computed with separate code, to 24 significant figures. Every number on this page is read from one data file, whose SHA-256 fingerprint is 934bee1f…, and a separate program recomputes every comparison from its raw values before the page is published.
Appendix: every comparison
Every value behind the tables above, at three significant figures; the data file has every digit. In brackets after each FDE value: its error against an exact answer, or its difference from the reference's value and whether it lies inside or outside the reference's range. EIM likewise, or why it has no value.
Silicon slab between SiO₂ layers, in a closed 2 µm box: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE, effective index | 2.85 (exact) | 2.85 (−0.00249) | 2.85 (−6.25 × 10⁻⁴) | 2.85 (−1.56 × 10⁻⁴) | by construction, not evidence |
| TM, effective index | 2.02 (exact) | 2.02 (+0.00760) | 2.02 (+0.00190) | 2.02 (+4.74 × 10⁻⁴) | by construction, not evidence |
Exact answer, computed to 24 significant figures.
220 nm silicon slab on SiO₂, air or SiO₂ above: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| 220 nm silicon slab, in air, TE0, dispersion (β₂) | 0.621 (exact) | 0.622 (+9.97 × 10⁻⁴) | 0.621 (+1.07 × 10⁻⁴) | 0.621 (+5.66 × 10⁻⁶) | by construction, not evidence |
| 220 nm silicon slab, in air, TE0, effective index | 2.83 (exact) | 2.83 (−0.00271) | 2.83 (−6.80 × 10⁻⁴) | 2.83 (−1.70 × 10⁻⁴) | by construction, not evidence |
| 220 nm silicon slab, in air, TE0, group index | 3.59 (exact) | 3.59 (−0.00471) | 3.59 (−0.00119) | 3.59 (−3.02 × 10⁻⁴) | by construction, not evidence |
| 220 nm silicon slab, in air, TM0, dispersion (β₂) | 16.5 (exact) | 16.1 (−0.428) | 16.4 (−0.109) | 16.5 (−0.0299) | no value (the exact answer is for the closed box FDE solves in) |
| 220 nm silicon slab, in air, TM0, effective index | 1.85 (exact) | 1.86 (+0.00849) | 1.85 (+0.00212) | 1.85 (+5.29 × 10⁻⁴) | no value (the exact answer is for the closed box FDE solves in) |
| 220 nm silicon slab, in air, TM0, group index | 4.07 (exact) | 4.09 (+0.0270) | 4.07 (+0.00668) | 4.07 (+0.00153) | no value (the exact answer is for the closed box FDE solves in) |
| 220 nm silicon slab, in SiO₂, TE0, dispersion (β₂) | 0.682 (exact) | 0.682 (+2.52 × 10⁻⁴) | 0.682 (−6.35 × 10⁻⁵) | 0.682 (−3.60 × 10⁻⁵) | by construction, not evidence |
| 220 nm silicon slab, in SiO₂, TE0, effective index | 2.85 (exact) | 2.85 (−0.00249) | 2.85 (−6.25 × 10⁻⁴) | 2.85 (−1.56 × 10⁻⁴) | by construction, not evidence |
| 220 nm silicon slab, in SiO₂, TE0, group index | 3.58 (exact) | 3.57 (−0.00447) | 3.58 (−0.00113) | 3.58 (−2.86 × 10⁻⁴) | by construction, not evidence |
| 220 nm silicon slab, in SiO₂, TM0, dispersion (β₂) | 10.5 (exact) | 10.3 (−0.229) | 10.5 (−0.0580) | 10.5 (−0.0157) | no value (the exact answer is for the closed box FDE solves in) |
| 220 nm silicon slab, in SiO₂, TM0, effective index | 2.02 (exact) | 2.02 (+0.00760) | 2.02 (+0.00190) | 2.02 (+4.74 × 10⁻⁴) | no value (the exact answer is for the closed box FDE solves in) |
| 220 nm silicon slab, in SiO₂, TM0, group index | 3.93 (exact) | 3.95 (+0.0192) | 3.94 (+0.00477) | 3.93 (+0.00113) | no value (the exact answer is for the closed box FDE solves in) |
Exact answer, computed to 24 significant figures.
Slab of index 2.0, 400 nm wide, bent into an arc: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| slab TE (electric field along the layers), 3 µm radius, bend loss | 1.70 (exact) | 1.72 (+0.0137) | 1.71 (+0.00300) | 1.70 (+8.08 × 10⁻⁴) | 1.83 (+0.127) |
| slab TE (electric field along the layers), 3 µm radius, loss, as the imaginary part of the effective index | 0.0103 (exact) | 0.0103 (+8.25 × 10⁻⁵) | 0.0103 (+1.81 × 10⁻⁵) | 0.0103 (+4.87 × 10⁻⁶) | no value (its bend formula gives loss only) |
| slab TE (electric field along the layers), 3 µm radius, effective index | 1.77 (exact) | 1.77 (−4.15 × 10⁻⁴) | 1.77 (−1.04 × 10⁻⁴) | 1.77 (−2.60 × 10⁻⁵) | no value (its bend formula gives loss only) |
| slab TE (electric field along the layers), 5 µm radius, bend loss | 0.399 (exact) | 0.405 (+0.00510) | 0.401 (+0.00131) | 0.400 (+3.28 × 10⁻⁴) | 0.332 (−0.0671) |
| slab TE (electric field along the layers), 5 µm radius, loss, as the imaginary part of the effective index | 0.00144 (exact) | 0.00146 (+1.85 × 10⁻⁵) | 0.00145 (+4.75 × 10⁻⁶) | 0.00145 (+1.19 × 10⁻⁶) | no value (its bend formula gives loss only) |
| slab TE (electric field along the layers), 5 µm radius, effective index | 1.76 (exact) | 1.76 (−4.67 × 10⁻⁴) | 1.76 (−1.19 × 10⁻⁴) | 1.76 (−2.98 × 10⁻⁵) | no value (its bend formula gives loss only) |
| slab TE (electric field along the layers), 10 µm radius, bend loss | 0.00508 (exact) | 0.00524 (+1.57 × 10⁻⁴) | 0.00512 (+3.74 × 10⁻⁵) | 0.00509 (+9.07 × 10⁻⁶) | 0.00237 (−0.00271) |
| slab TE (electric field along the layers), 10 µm radius, loss, as the imaginary part of the effective index | 9.19 × 10⁻⁶ (exact) | 9.47 × 10⁻⁶ (+2.84 × 10⁻⁷) | 9.25 × 10⁻⁶ (+6.76 × 10⁻⁸) | 9.20 × 10⁻⁶ (+1.64 × 10⁻⁸) | no value (its bend formula gives loss only) |
| slab TE (electric field along the layers), 10 µm radius, effective index | 1.75 (exact) | 1.75 (−5.37 × 10⁻⁴) | 1.75 (−1.31 × 10⁻⁴) | 1.75 (−3.26 × 10⁻⁵) | no value (its bend formula gives loss only) |
Exact answer, computed to 24 significant figures.
220 nm silicon slab over a SiO₂ buffer on a silicon substrate: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| 220 nm silicon slab, in air, 0.3 µm buffer, TE0, leakage loss | 386 (exact) | 393 (+6.51) | 388 (+1.63) | 387 (+0.407) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.3 µm buffer, TE0, loss, as the imaginary part of the effective index | 0.00110 (exact) | 0.00112 (+1.85 × 10⁻⁵) | 0.00110 (+4.62 × 10⁻⁶) | 0.00110 (+1.16 × 10⁻⁶) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.3 µm buffer, TE0, effective index | 2.83 (exact) | 2.83 (−0.00270) | 2.83 (−6.78 × 10⁻⁴) | 2.83 (−1.70 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.5 µm buffer, TE0, leakage loss | 7.45 (exact) | 7.66 (+0.213) | 7.50 (+0.0530) | 7.46 (+0.0132) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.5 µm buffer, TE0, loss, as the imaginary part of the effective index | 2.12 × 10⁻⁵ (exact) | 2.18 × 10⁻⁵ (+6.06 × 10⁻⁷) | 2.13 × 10⁻⁵ (+1.51 × 10⁻⁷) | 2.12 × 10⁻⁵ (+3.76 × 10⁻⁸) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.5 µm buffer, TE0, effective index | 2.83 (exact) | 2.83 (−0.00271) | 2.83 (−6.80 × 10⁻⁴) | 2.83 (−1.70 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.7 µm buffer, TE0, leakage loss | 0.144 (exact) | 0.150 (+0.00582) | 0.145 (+0.00144) | 0.144 (+3.59 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.7 µm buffer, TE0, loss, as the imaginary part of the effective index | 4.08 × 10⁻⁷ (exact) | 4.25 × 10⁻⁷ (+1.65 × 10⁻⁸) | 4.12 × 10⁻⁷ (+4.09 × 10⁻⁹) | 4.09 × 10⁻⁷ (+1.02 × 10⁻⁹) | no value (no substrate leakage) |
| 220 nm silicon slab, in air, 0.7 µm buffer, TE0, effective index | 2.83 (exact) | 2.83 (−0.00271) | 2.83 (−6.80 × 10⁻⁴) | 2.83 (−1.70 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, leakage loss | 353 (exact) | 359 (+5.63) | 355 (+1.41) | 354 (+0.352) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, loss, as the imaginary part of the effective index | 0.00100 (exact) | 0.00102 (+1.60 × 10⁻⁵) | 0.00101 (+4.00 × 10⁻⁶) | 0.00100 (+1.00 × 10⁻⁶) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.3 µm buffer, TE0, effective index | 2.85 (exact) | 2.85 (−0.00248) | 2.85 (−6.23 × 10⁻⁴) | 2.85 (−1.56 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, leakage loss | 6.60 (exact) | 6.78 (+0.181) | 6.65 (+0.0451) | 6.61 (+0.0112) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, loss, as the imaginary part of the effective index | 1.88 × 10⁻⁵ (exact) | 1.93 × 10⁻⁵ (+5.14 × 10⁻⁷) | 1.89 × 10⁻⁵ (+1.28 × 10⁻⁷) | 1.88 × 10⁻⁵ (+3.19 × 10⁻⁸) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.5 µm buffer, TE0, effective index | 2.85 (exact) | 2.85 (−0.00249) | 2.85 (−6.25 × 10⁻⁴) | 2.85 (−1.56 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, leakage loss | 0.123 (exact) | 0.128 (+0.00481) | 0.125 (+0.00119) | 0.124 (+2.97 × 10⁻⁴) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, loss, as the imaginary part of the effective index | 3.50 × 10⁻⁷ (exact) | 3.64 × 10⁻⁷ (+1.37 × 10⁻⁸) | 3.54 × 10⁻⁷ (+3.39 × 10⁻⁹) | 3.51 × 10⁻⁷ (+8.44 × 10⁻¹⁰) | no value (no substrate leakage) |
| 220 nm silicon slab, in SiO₂, 0.7 µm buffer, TE0, effective index | 2.85 (exact) | 2.85 (−0.00249) | 2.85 (−6.25 × 10⁻⁴) | 2.85 (−1.56 × 10⁻⁴) | no value (no substrate leakage) |
Exact answer, computed to 24 significant figures.
300 nm lithium niobate slab, crystal axis normal to the film: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TM, effective index | 1.46 (exact) | 1.47 (+0.00135) | 1.46 (+3.67 × 10⁻⁴) | 1.46 (+9.17 × 10⁻⁵) | by construction, not evidence |
Exact answer, computed to 24 significant figures.
SOI Strip 220: MPB
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE0, effective index | 2.39 ± 4.13 × 10⁻⁶ | 2.38 (−0.00183, outside) | 2.39 (−3.23 × 10⁻⁴, outside) | 2.39 (+1.74 × 10⁻⁵, outside) | 2.42 (+0.0361, outside) |
| TM, in a 3.0 × 4.0 µm window, effective index | 1.58 ± 2.89 × 10⁻⁵ | 1.59 (+0.00692, outside) | 1.58 (+0.00198, outside) | 1.58 (+5.87 × 10⁻⁴, outside) | 1.64 (+0.0627, outside) |
| TM0, effective index | 1.58 ± 6.11 × 10⁻⁵ | 1.59 (+0.00719, outside) | 1.58 (+0.00226, outside) | 1.58 (+8.77 × 10⁻⁴, outside) | 1.64 (+0.0628, outside) |
MPB 1.12.0, at 50, 100, 200 and 400 pixels per µm; the range spans its two finest resolutions.
MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.
SOI Rib: MPB
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE0, effective index | 2.53 ± 1.51 × 10⁻⁶ | 2.53 (−6.86 × 10⁻⁴, outside) | 2.53 (+1.62 × 10⁻⁴, outside) | not run at this level | 2.57 (+0.0443, outside) |
MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.
Slot Waveguide: MPB
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE0, effective index | 1.74 ± 7.41 × 10⁻⁵ | 1.75 (+0.00693, outside) | 1.74 (+0.00254, outside) | 1.74 (+9.69 × 10⁻⁴, outside) | 1.92 (+0.184, outside) |
MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.
LNOI Rib (x-cut): MPB
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE0, effective index | 1.86 ± 3.54 × 10⁻⁶ | 1.86 (−7.21 × 10⁻⁵, outside) | 1.86 (+1.13 × 10⁻⁵, outside) | not run at this level | no value (cannot model lithium niobate) |
| TM0, effective index | 1.85 ± 1.58 × 10⁻⁵ | 1.85 (+8.57 × 10⁻⁴, outside) | 1.85 (+2.18 × 10⁻⁴, outside) | not run at this level | no value (cannot model lithium niobate) |
MPB 1.12.0, at 50, 100 and 200 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.
Strips over 1500 to 1600 nm: MPB
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| silicon nitride strip, in air, dispersion (β₂) | 0.989 ± 4.94 × 10⁻⁴ | 0.991 (+0.00256, outside) | 0.992 (+0.00333, outside) | 0.972 (−0.0169, outside) | 0.340 (−0.649, outside) |
| silicon nitride strip, in air, effective index | 1.57 ± 1.84 × 10⁻⁵ | 1.57 (−2.55 × 10⁻⁴, outside) | 1.57 (−3.22 × 10⁻⁵, outside) | 1.57 (+1.15 × 10⁻⁶, inside) | 1.57 (+7.35 × 10⁻⁴, outside) |
| silicon nitride strip, in air, group index | 2.14 ± 1.36 × 10⁻⁴ | 2.13 (−0.00191, outside) | 2.14 (−3.80 × 10⁻⁴, outside) | 2.14 (+3.04 × 10⁻⁴, outside) | 2.16 (+0.0218, outside) |
| silicon nitride strip, in SiO₂, dispersion (β₂) | 1.01 ± 1.78 × 10⁻⁵ | 0.999 (−0.0102, outside) | 1.00 (−0.00723, outside) | 1.00 (−0.00657, outside) | 1.06 (+0.0535, outside) |
| silicon nitride strip, in SiO₂, effective index | 1.64 ± 1.16 × 10⁻⁵ | 1.64 (−1.98 × 10⁻⁴, outside) | 1.64 (−4.14 × 10⁻⁵, outside) | 1.64 (−5.30 × 10⁻⁶, inside) | 1.65 (+0.0146, outside) |
| silicon nitride strip, in SiO₂, group index | 2.06 ± 9.27 × 10⁻⁵ | 2.05 (−8.66 × 10⁻⁴, outside) | 2.06 (−2.14 × 10⁻⁵, inside) | 2.06 (+1.92 × 10⁻⁴, outside) | 2.03 (−0.0269, outside) |
| silicon strip, in air, dispersion (β₂) | −2.86 ± 8.82 × 10⁻⁵ | −2.83 (+0.0289, outside) | not run at this level | −2.85 (+0.00213, outside) | −1.18 (+1.68, outside) |
| silicon strip, in air, effective index | 2.39 ± 1.13 × 10⁻⁵ | 2.38 (−0.00159, outside) | not run at this level | 2.39 (+4.04 × 10⁻⁵, outside) | 2.42 (+0.0361, outside) |
| silicon strip, in air, group index | 4.37 ± 3.33 × 10⁻⁴ | 4.36 (−0.00653, outside) | not run at this level | 4.37 (−2.99 × 10⁻⁴, inside) | 4.24 (−0.134, outside) |
| silicon strip, in SiO₂, dispersion (β₂) | −0.618 ± 0.00244 | −0.609 (+0.00869, outside) | not run at this level | −0.620 (−0.00224, inside) | 1.29 (+1.91, outside) |
| silicon strip, in SiO₂, effective index | 2.45 ± 1.57 × 10⁻⁵ | 2.45 (−0.00133, outside) | not run at this level | 2.45 (+7.31 × 10⁻⁶, inside) | 2.49 (+0.0461, outside) |
| silicon strip, in SiO₂, group index | 4.20 ± 5.14 × 10⁻⁴ | 4.19 (−0.00544, outside) | not run at this level | 4.20 (+3.42 × 10⁻⁵, inside) | 4.03 (−0.165, outside) |
MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.
MPB 1.12.0, at 50, 100 and 200 pixels per µm; the range spans its finest resolution and the value its resolutions converge to.
MPB 1.12.0, at 100, 200 and 400 pixels per µm; the range spans its two finest resolutions.
Bent strip and slot waveguides: Meep
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| slot, TE, 2 µm radius, loss, as the imaginary part of the effective index | 0.00519 ± 2.19 × 10⁻⁵ | 0.00500 (−1.90 × 10⁻⁴, outside) | 0.00520 (+1.42 × 10⁻⁵, inside) | 0.00528 (+8.69 × 10⁻⁵, outside) | 0.0194 (+0.0142, outside) |
| slot, TE, 2 µm radius, effective index | 1.83 ± 0.00213 | 1.84 (+0.00524, outside) | 1.83 (+9.51 × 10⁻⁴, inside) | 1.83 (−5.46 × 10⁻⁴, inside) | no value (its bend formula gives loss only) |
| slot, TE, 4.67 µm radius, loss, as the imaginary part of the effective index | 1.86 × 10⁻⁴ ± 3.27 × 10⁻⁶ | 1.65 × 10⁻⁴ (−2.16 × 10⁻⁵, outside) | 1.82 × 10⁻⁴ (−4.13 × 10⁻⁶, outside) | 1.89 × 10⁻⁴ (+2.27 × 10⁻⁶, inside) | 7.04 × 10⁻⁵ (−1.16 × 10⁻⁴, outside) |
| slot, TE, 4.67 µm radius, effective index | 1.75 ± 8.35 × 10⁻⁴ | 1.75 (+0.00594, outside) | 1.75 (+0.00157, outside) | 1.75 (+2.31 × 10⁻⁵, inside) | no value (its bend formula gives loss only) |
| strip, TE, 1 µm radius, loss, as the imaginary part of the effective index | 1.48 × 10⁻⁴ ± 4.03 × 10⁻⁶ | 1.55 × 10⁻⁴ (+6.76 × 10⁻⁶, outside) | 1.51 × 10⁻⁴ (+2.42 × 10⁻⁶, inside) | 1.49 × 10⁻⁴ (+9.29 × 10⁻⁷, inside) | 0.00147 (+0.00132, outside) |
| strip, TE, 1 µm radius, effective index | 2.43 ± 0.00111 | 2.43 (−0.00170, outside) | 2.43 (−7.38 × 10⁻⁴, inside) | 2.43 (−5.24 × 10⁻⁴, inside) | no value (its bend formula gives loss only) |
| strip, TE, 2.5 µm radius, effective index | 2.38 ± 0.00112 | 2.38 (−0.00213, outside) | 2.38 (−6.81 × 10⁻⁴, inside) | 2.38 (−3.49 × 10⁻⁴, inside) | no value (its bend formula gives loss only) |
| strip, TE, 5 µm radius, effective index | 2.38 ± 0.00114 | 2.38 (−0.00217, outside) | 2.38 (−6.50 × 10⁻⁴, inside) | 2.38 (−3.08 × 10⁻⁴, inside) | no value (its bend formula gives loss only) |
| strip, TE, 10 µm radius, effective index | 2.39 ± 0.00116 | 2.39 (−0.00214, outside) | 2.39 (−6.23 × 10⁻⁴, inside) | 2.39 (−2.74 × 10⁻⁴, inside) | no value (its bend formula gives loss only) |
Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 300 pixels per µm; the ring's decay is turned into a loss along the waveguide with Meep's own group index at the operating wavelength, and the range is the sum of three measured differences: the group index's change over the last grid refinement, the difference between the 3-point and 5-point group-index estimates and the loss's change over the last grid refinement.
Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the range is how much its answer changed from 100 to 200 pixels per µm.
Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the ring's decay is turned into a loss along the waveguide with Meep's own group index at the operating wavelength, and the range is the sum of three measured differences: the group index's change over the last grid refinement, the difference between the 3-point and 5-point group-index estimates and the loss's change over the last grid refinement.
The slot's loss reference was revised: the earlier conversion from the ring's decay to a loss along the waveguide took the group index from two neighboring ring orders on the coarsest grid, an average over 47.2 nm at 2 µm and 22.1 nm at 4.67 µm on one side of the wavelength, which read it 2.76 % and 1.07 % low. Meep's own group index at the operating wavelength moves the reference by +2.69 % at 2 µm and +1.08 % at 4.67 µm.
Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 200 pixels per µm; the range is how much its answer changed from 100 to 200 pixels per µm. The range also includes the uncertainty of the group index used to turn the ring's decay into a loss along the waveguide.
Meep 1.34.0, solving the bent waveguide's full wave equations using its rotational symmetry, at 50 and 100 pixels per µm, extrapolated from those two resolutions; the range is how far that extrapolation moved its finest result.
Corrections confirmed
A correction to FDE's bend grid, confirmed: the loss of a 220 nm silicon strip's TM mode bent at 10 µm, at Standard, is reproduced exactly as recorded when the correction was made.
A correction to how FDE maps a bend, before and after: the loss of SOI Strip 220's TE mode at 1 µm radius and 1550 nm, at each mesh level.
| Level | Cell size (nm) | Loss before the correction (dB per 90°) | Loss now (dB per 90°) |
|---|---|---|---|
| Coarse | 20 | 0.00917 | 0.0118 |
| Standard | 10 | 0.00892 | 0.0115 |
| Fine | 5 | not recorded | 0.0114 |