Benchmark
PIC Directional Coupler Simulator: benchmark
How accurate is it? The PIC Directional Coupler Simulator designs couplers between two waveguides. It computes how strongly they couple: the difference Δn between the effective indices of the two modes the pair shares, the coupling length L_c over which light crosses fully to the other waveguide, and κ², the fraction of the power that crosses, for straight couplers and for curved ones such as a ring passing its bus. It has two engines. EIM ("Effective index" in the tool's engine menu), the effective index method, is free and runs in your browser. FDE ("Full-vectorial" in the menu), a finite-difference mode solver that keeps every field component, is paid and runs on our servers, at three mesh levels: Coarse (the default), Standard and Fine. This page measures both against an exact answer and against two free, independent programs, MPB and Meep, which we ran ourselves.
Short answer: FDE's coupling length is within 4.1 % of an independent mode solver's at the default Coarse mesh and within 2.1 % at Standard. For a ring passing its bus, FDE's κ² falls inside the range of a full 3D simulation, which is up to ±11 % there. On four values, all with air above, FDE's difference from the mode solver is larger than the accuracy the tool prints for that design, and we have not found why. EIM's coupling length is off by up to 43 %, so use it to explore, and FDE to set a length.
Summary
- Exact answer. For two flat silicon slabs side by side, whose coupling follows from an exact equation, FDE's error shrinks at each finer mesh level on all 24 comparisons, and its coupling length is within 0.98 % of the exact answer at Coarse.
- Independent mode solver, straight couplers. On 18 values from straight silicon and silicon nitride couplers, FDE at its finest mesh differs from MPB by 0.813 % typically and 2.01 % at most, on the SOI Strip 220 pair in air with a 200 nm gap; see Limits. On 2 of the 18 it lands inside MPB's own range.
- Full 3D simulation, a ring passing its bus. At ring radii of 10 and 5 µm, FDE's κ² at Coarse and at Standard lands inside Meep's range in both cases.
- Where it is less accurate. When both waveguides bend into the coupler, FDE's κ² is too low: 59.5 to 59.8 % below Meep's value on the 3 µm S-bends and 18.5 to 18.6 % below on the 6 µm ones, at Standard. On such a design the tool cautions that the bends couple more than its estimate includes, by an amount measured in 3D on this same pair of waveguides; that is a correction, not a separate check. For a ring passing its bus, FDE's κ² is −8.63 % and −10.4 % from Meep's value at 10 and 5 µm: both below it, the same direction as the S-bend shortfall, but inside Meep's range of up to ±11 %, so this comparison is inconclusive there; Meep at a second resolution on one ring would tell. EIM has no model for both waveguides bending. When EIM is enough
On every value where both engines give a number, FDE at its finest mesh is at least as close to the reference as EIM.
An independent program's answer also shifts a little with its own settings. Its range is that shift at its finest settings, and the record prints every difference, inside it or outside it.
Against an exact answer: how the error shrinks with the mesh
Two flat silicon slabs side by side have a coupling that follows from an exact equation. We solve them with FDE at its three mesh levels and compare with the exact answer, computed to 23 significant figures. Table 1 lists the coupling length; Figure 1 shows how the error falls as the cells get smaller.
Two 500 nm silicon slabs (n 3.476) in SiO₂ (n 1.444), side by side with gaps of 100, 200 and 300 nm, filling a closed 2 µm high box, at 1550 nm; light polarized across the gap (TE-like) and along the walls (TM-like).
Open a silicon coupler in the toolTable 1. Coupling length of two flat silicon slabs, against the exact answer
| Polarization | Gap (nm) | Exact L_c (µm) | FDE error, Coarse | Standard | Fine |
|---|---|---|---|---|---|
| TE-like (field across the gap) | 100 | 29.3 | −0.575 % | −0.145 % | −0.0363 % |
| TE-like (field across the gap) | 200 | 97.8 | −0.769 % | −0.194 % | −0.0486 % |
| TE-like (field across the gap) | 300 | 307 | −0.976 % | −0.246 % | −0.0617 % |
| TM-like (field along the walls) | 100 | 13.8 | −0.102 % | −0.0261 % | −0.00657 % |
| TM-like (field along the walls) | 200 | 45.8 | −0.375 % | −0.0949 % | −0.0238 % |
| TM-like (field along the walls) | 300 | 151 | −0.677 % | −0.171 % | −0.0429 % |
FDE's coupling length is within 0.98 % of the exact answer at Coarse, 0.25 % at Standard and 0.062 % at Fine; each halving of the cell size cuts the error about fourfold.
- gap 100 nm
- gap 200 nm
- gap 300 nm
- TE-like
- TM-like
Straight couplers against MPB: coupling length
MPB is a free, open-source mode solver from MIT. We solved each straight pair with it at resolutions up to 200 pixels per µm. Its range is how much its answer still moves at its finest settings. Table 2 gives MPB's coupling length and FDE's difference from it at Coarse and Standard; the last column is the accuracy the tool itself prints on that design. Figure 2 plots both.
Si pair in SiO₂, fixed indices
Two 500 × 220 nm silicon strips (n 3.476) in SiO₂ (n 1.444), gaps from 120 to 640 nm, 1550 nm, TE.
Open a similar design (dispersive materials; this comparison used fixed indices)SOI Strip 220 pair (air above)
Two SOI Strip 220 waveguides (500 × 220 nm silicon on SiO₂, air above), gaps of 150, 200 and 300 nm, 1550 nm, TE.
Open this case in the toolSiN Strip 400 pair, SiO₂ above
Two 1000 × 400 nm silicon nitride strips on SiO₂ with SiO₂ above, gaps of 200, 400 and 600 nm, 1550 nm, TE.
Open this case in the toolSiN Strip 400 pair (air above)
Two 1000 × 400 nm silicon nitride strips on SiO₂ with air above, gaps of 200, 400 and 600 nm, 1550 nm, TE.
Open this case in the toolTable 2. FDE's coupling length against MPB
| Coupler | Gap (nm) | MPB L_c (µm) | MPB range (± %) | FDE − MPB, Coarse | FDE − MPB, Standard | Accuracy the tool prints (Coarse; Standard) |
|---|---|---|---|---|---|---|
| Si pair in SiO₂, fixed indices | 120 | 18.0 | 0.163 | −1.98 % (outside) | −0.834 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 160 | 26.4 | 0.147 | −2.00 % (outside) | −0.819 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 200 | 38.0 | 0.132 | −2.03 % (outside) | −0.810 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 240 | 54.1 | 0.118 | −2.07 % (outside) | −0.804 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 320 | 109 | 0.0906 | −2.16 % (outside) | −0.798 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 400 | 216 | 0.0651 | −2.26 % (outside) | −0.797 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 480 | 429 | 0.0351 | −2.37 % (outside) | −0.808 % (outside) | none (fixed indices) |
| Si pair in SiO₂, fixed indices | 640 | 1670 | 0.00941 | −2.57 % (outside) | −0.816 % (outside) | none (fixed indices) |
| SOI Strip 220 pair (air above) | 150 | 46.7 | 0.650 | −2.77 % (outside) | −0.826 % (outside) | within 4 %; within 1 % |
| SOI Strip 220 pair (air above) | 200 | 75.4 | 0.596 | −4.07 % (outside) * | −2.01 % (outside) * | within 4 %; within 1 % |
| SOI Strip 220 pair (air above) | 300 | 185 | 0.458 | −3.95 % (outside) | −1.83 % (outside) * | within 4 %; within 1 % |
| SiN Strip 400 pair, SiO₂ above | 200 | 19.8 | 0.0172 | −0.227 % (outside) | −0.0530 % (outside) | within 2 %; within 0.4 % |
| SiN Strip 400 pair, SiO₂ above | 400 | 41.6 | 0.0421 | −0.317 % (outside) | −0.0203 % (inside) | within 2 %; within 0.4 % |
| SiN Strip 400 pair, SiO₂ above | 600 | 84.8 | 0.0730 | −0.318 % (outside) | +0.0245 % (inside) | within 2 %; within 0.4 % |
| SiN Strip 400 pair (air above) | 200 | 31.1 | 0.0853 | −1.27 % (outside) | −0.521 % (outside) * | within 2 %; within 0.4 % |
| SiN Strip 400 pair (air above) | 400 | 77.1 | 0.0132 | −1.23 % (outside) | too large to run at this mesh | within 2 %; (not run) |
| SiN Strip 400 pair (air above) | 600 | 177 | 0.0590 | −1.17 % (outside) | too large to run at this mesh | within 2 %; (not run) |
* larger than the accuracy the tool prints for that design
On the silicon pairs in SiO₂, FDE's coupling length is within 2.6 % of MPB's at Coarse and 0.84 % at Standard, at every gap from 120 to 640 nm. On the silicon nitride pairs in SiO₂ it is within 0.32 % and 0.054 %, inside MPB's range at Standard at 400 and 600 nm. In air the differences are larger: within 4.1 % and 2.1 % on the silicon pairs; on the silicon nitride pairs within 1.3 % at Coarse, and 0.53 % at 200 nm, the one gap that ran at Standard.
On four values, marked * in the table, the difference from MPB is larger than the accuracy the tool prints for that design; see Limits.
(b) FDE − MPB
- MPB
- FDE Coarse
- FDE Standard
- MPB's range
- Accuracy the tool prints, Coarse
- Accuracy the tool prints, Standard
- too large to run at this mesh
How fast the coupling changes with wavelength sets a coupler's bandwidth. On the silicon pair in SiO₂ with a 200 nm gap, FDE at Coarse gets it −0.819 % from MPB's value, and EIM −7.98 %.
Table 3. How the coupling changes with wavelength, d ln Δn / dλ
| Coupler | Gap (nm) | MPB value (per nm) | MPB range (± %) | FDE − MPB, Coarse | EIM − MPB |
|---|---|---|---|---|---|
| Si pair in SiO₂, fixed indices | 200 | 0.00482 | 0.114 | −0.819 % (outside) | −7.98 % (outside) |
Curved couplers against a full 3D simulation: κ²
Meep is a free, open-source electromagnetic simulator from MIT. We used it to simulate whole curved couplers in 3D at 50 pixels per µm, twice: once with the curved walls drawn on the grid as a staircase, once smoothed. Meep's value is the middle of the two; its range is half their spread. Both programs used the same fixed indices. Table 4 covers a ring passing a straight bus; Table 5, couplers whose two waveguides both bend.
Two 500 × 220 nm silicon waveguides (n 3.476) in SiO₂ (n 1.444) at 1550 nm, TE: a ring of 10 or 5 µm radius passing a straight bus, 200 nm apart at the closest point.
Open a similar design (dispersive materials; this comparison used fixed indices)plane +3.60 to +4.00 or +6.60 to +7.00 µm
The same waveguides, 200 nm apart at the closest point, each bending away from the other in a raised-cosine S-bend that moves it 0.5 µm sideways over 3 µm or over 6 µm (the 3 µm and 6 µm S-bends). Meep measures κ² at three planes past the bends.
Open a similar design (dispersive materials; this comparison used fixed indices)Table 4. κ² of a ring passing a straight bus, against Meep
| Ring radius (µm) | Gap (nm) | Meep κ² | Meep range (± %) | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|---|---|
| 10 | 200 | 0.0140 | 11.0 | 0.0131 (−6.22 %, inside) | 0.0128 (−8.63 %, inside) | 0.0298 (+113 %, outside) |
| 5 | 200 | 0.00736 | 10.6 | 0.00676 (−8.05 %, inside) | 0.00659 (−10.4 %, inside) | 0.0154 (+109 %, outside) |
At both radii FDE lands inside Meep's range at Coarse and at Standard, below Meep's value: −8.63 % at 10 µm and −10.4 % at 5 µm at Standard. Meep's own range there is up to ±11 % (two ways of drawing the curved walls), so this comparison cannot resolve FDE's κ² more finely than that.
Table 5. κ² when both waveguides bend, against Meep
| S-bends | Plane (µm) | Meep κ² | Meep range (± %) | FDE κ² (Coarse; Standard) | FDE − Meep (Coarse; Standard) | κ² with the tool's correction (Coarse; Standard) |
|---|---|---|---|---|---|---|
| 3 µm S-bends (each guide moves 0.5 µm) | +3.60 | 0.00638 | 3.63 | 0.00265; 0.00258 | −58.4 %; −59.5 % | 0.00616 to 0.00771; 0.00600 to 0.00751 |
| 3 µm S-bends (each guide moves 0.5 µm) | +3.80 | 0.00640 | 3.71 | 0.00265; 0.00258 | −58.6 %; −59.6 % | 0.00616 to 0.00771; 0.00600 to 0.00751 |
| 3 µm S-bends (each guide moves 0.5 µm) | +4.00 | 0.00642 | 3.73 | 0.00265; 0.00258 | −58.7 %; −59.8 % | 0.00616 to 0.00771; 0.00600 to 0.00751 |
| 6 µm S-bends (each guide moves 0.5 µm) | +6.60 | 0.0121 | 3.47 | 0.0101; 0.00988 | −16.4 %; −18.6 % | 0.0116 to 0.0144; 0.0113 to 0.0140 |
| 6 µm S-bends (each guide moves 0.5 µm) | +6.80 | 0.0121 | 3.46 | 0.0101; 0.00988 | −16.4 %; −18.6 % | 0.0116 to 0.0144; 0.0113 to 0.0140 |
| 6 µm S-bends (each guide moves 0.5 µm) | +7.00 | 0.0121 | 3.42 | 0.0101; 0.00988 | −16.4 %; −18.5 % | 0.0116 to 0.0144; 0.0113 to 0.0140 |
Plane: where κ² is read, in µm from the closest point of the two waveguides toward the output ports.
FDE adds up the coupling along the gap as drawn, so it leaves out the extra coupling the bends themselves add: its κ² is 59.5 to 59.8 % below Meep's on the 3 µm S-bends and 18.5 to 18.6 % below on the 6 µm ones, at Standard. On such a design the tool cautions that the bends couple more than its estimate includes, by an amount measured in 3D on a reference pair of these same waveguides, Meep's run among them, and prints the κ² that extra coupling would give; the last column shows it.
- Meep
- FDE Coarse
- FDE Standard
- EIM
- with the tool's correction
EIM or FDE: when the free engine is enough
EIM replaces each waveguide's cross-section by two one-dimensional layer problems and builds the pair from them. It runs instantly in your browser. Table 6 puts EIM and FDE (finest level run) against the same references, as a percentage of the reference value.
- EIM is for exploring: its coupling length is off by up to 43 % here, so set a length with FDE.
- Silicon pairs: EIM's coupling length is too short by 30.9 to 42.8 % on the pairs in SiO₂, more at wider gaps, and by 33.0 to 33.9 % on the pairs in air.
- Silicon nitride pairs: in SiO₂ it is too short by 12.2 to 24.3 %. In air its error changes sign with the gap: −7.08, +5.53, +23.2 % at 200, 400 and 600 nm, so no single correction fixes it.
- Ring passing a bus: EIM's κ² is more than double Meep's value: +113 % at 10 µm and +109 % at 5 µm.
- Wavelength dependence: EIM's slope of the coupling with wavelength is −7.98 % from MPB's, FDE's −0.819 %.
- Both waveguides bending: EIM has no model for this shape and prints no coupling.
Table 6. EIM and FDE against the same references
| Coupler | Quantity | Reference | EIM − reference | FDE (finest level run) − reference |
|---|---|---|---|---|
| Si pair in SiO₂, fixed indices, gap 120 nm | coupling length | MPB | −30.9 % | −0.834 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 160 nm | coupling length | MPB | −32.3 % | −0.819 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 200 nm | coupling length | MPB | −33.6 % | −0.810 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 240 nm | coupling length | MPB | −34.8 % | −0.804 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 320 nm | coupling length | MPB | −36.9 % | −0.798 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 400 nm | coupling length | MPB | −38.8 % | −0.797 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 480 nm | coupling length | MPB | −40.4 % | −0.808 % (Standard) |
| Si pair in SiO₂, fixed indices, gap 640 nm | coupling length | MPB | −42.8 % | −0.816 % (Standard) |
| SOI Strip 220 pair (air above), gap 150 nm | coupling length | MPB | −33.7 % | −0.826 % (Standard) |
| SOI Strip 220 pair (air above), gap 200 nm | coupling length | MPB | −33.9 % | −2.01 % (Standard) |
| SOI Strip 220 pair (air above), gap 300 nm | coupling length | MPB | −33.0 % | −1.83 % (Standard) |
| SiN Strip 400 pair, SiO₂ above, gap 200 nm | coupling length | MPB | −12.2 % | −0.0530 % (Standard) |
| SiN Strip 400 pair, SiO₂ above, gap 400 nm | coupling length | MPB | −19.5 % | −0.0203 % (Standard) |
| SiN Strip 400 pair, SiO₂ above, gap 600 nm | coupling length | MPB | −24.3 % | +0.0245 % (Standard) |
| SiN Strip 400 pair (air above), gap 200 nm | coupling length | MPB | −7.08 % | −0.521 % (Standard) |
| SiN Strip 400 pair (air above), gap 400 nm | coupling length | MPB | +5.53 % | −1.23 % (Coarse) |
| SiN Strip 400 pair (air above), gap 600 nm | coupling length | MPB | +23.2 % | −1.17 % (Coarse) |
| Si pair in SiO₂, fixed indices, gap 200 nm | how the coupling changes with wavelength | MPB | −7.98 % | −0.819 % (Coarse) |
| Ring of 10 µm radius over a bus, gap 200 nm | power coupled (κ²) | Meep | +113 % | −8.63 % (Standard) |
| Ring of 5 µm radius over a bus, gap 200 nm | power coupled (κ²) | Meep | +109 % | −10.4 % (Standard) |
- EIM
- FDE (finest level run)
Limits
- Two couplers did not run at Standard. The silicon nitride pairs in air with 400 and 600 nm gaps need a solve window at that mesh larger than our servers accept, and the tool refuses them the same way before starting. They ran at Coarse, as Table 2 shows. This is a limit on what runs, not on accuracy.
- Against the accuracy the tool prints. On four values with air above, FDE's coupling length differs from MPB's by more than the figure the tool prints for that design: the SOI Strip 220 pair (air above) at 200 nm, −4.07 % at Coarse against "within 4 %"; the SOI Strip 220 pair (air above) at 200 nm, −2.01 % at Standard against "within 1 %"; the SOI Strip 220 pair (air above) at 300 nm, −1.83 % at Standard against "within 1 %"; the SiN Strip 400 pair (air above) at 200 nm, −0.521 % at Standard against "within 0.4 %". That figure measures how far FDE's answer at a mesh level is from its own answer on finer meshes, measured on silicon and silicon nitride pairs with a 200 nm gap; it is not a comparison with another program. On each of these values MPB was still moving toward FDE between its two finest resolutions, and on the silicon pairs in air MPB's range is ±0.458 to ±0.650 %, against ±0.00941 to ±0.163 % on the pairs in SiO₂. With air above, the field jumps more sharply at the waveguides' top faces and across the gap, where any solver on a grid, MPB included, converges slowest, so MPB's range there is probably too narrow. That is our reading, not a measurement.
- Fine is not tested here. The tool offers Coarse, Standard and Fine; we ran Coarse and Standard on every coupler, and Coarse only for the wavelength slope.
- The references have their own ranges. Meep ran at one resolution, 50 pixels per µm, with two ways of drawing the curved walls; its range is their spread, not a resolution study. MPB's range is set from its two finest resolutions.
- Fixed indices. The silicon pairs in SiO₂, the wavelength slope, the rings and the S-bends used fixed indices (3.476 for silicon, 1.444 for SiO₂) in both programs. The design each one opens uses the tool's wavelength-dependent materials, which differ slightly.
- Shapes the tool cannot draw. The exact slabs ran on FDE's solver directly, not through the tool; they show the solver's accuracy, not a design you can open.
- Evidence from the rule that links coupling length to power transfer. The tool's model is built on that rule, so a check of it would pass by construction.
- The coupling length of a coupler you fabricate, closer than its gap tolerance allows.
- The coupling of a curved coupler more precisely than the 3D simulation's own range.
- S-bend shapes other than the two measured.
Data and how it was produced
Every coupler the tool can draw ran through the same path a design takes in the tool: the same input checks, the same solver and the same mesh rule, with fixed-index materials where the comparison used them. The exact slabs, which it cannot draw, ran on the same solver directly. We ran both engines on October 21, 2026, and ran MPB 1.12.0 and Meep 1.34.0 ourselves at the resolutions each table names; the exact answers were computed with separate code, to 23 significant figures. Every number on this page is read from one data file, whose SHA-256 fingerprint is d16f41d1…, and a separate program recomputes every comparison from its raw values before the page is published.
Appendix: every comparison
Every value behind the tables above, at three significant figures; the data file has every digit. In brackets after each FDE value: its error against an exact answer, or its difference from the reference's value and whether it lies inside or outside the reference's range. EIM likewise, or why it has no value.
Two flat silicon slabs in SiO₂, in a closed 2 µm box: exact answer
| Case | Reference | FDE Coarse | FDE Standard | FDE Fine | EIM |
|---|---|---|---|---|---|
| TE-like (field across the gap), gap 100 nm, effective index of the even supermode | 3.15 (exact) | 3.15 (+7.88 × 10⁻⁴) | 3.15 (+1.97 × 10⁻⁴) | 3.15 (+4.94 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 100 nm, effective index of the odd supermode | 3.12 (exact) | 3.12 (+6.35 × 10⁻⁴) | 3.12 (+1.59 × 10⁻⁴) | 3.12 (+3.97 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 100 nm, index difference of the two supermodes | 0.0265 (exact) | 0.0266 (+1.53 × 10⁻⁴) | 0.0265 (+3.84 × 10⁻⁵) | 0.0265 (+9.61 × 10⁻⁶) | by construction, not evidence |
| TE-like (field across the gap), gap 100 nm, coupling length | 29.3 (exact) | 29.1 (−0.168) | 29.2 (−0.0424) | 29.3 (−0.0106) | by construction, not evidence |
| TE-like (field across the gap), gap 200 nm, effective index of the even supermode | 3.13 (exact) | 3.13 (+7.20 × 10⁻⁴) | 3.13 (+1.80 × 10⁻⁴) | 3.13 (+4.51 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 200 nm, effective index of the odd supermode | 3.13 (exact) | 3.13 (+6.58 × 10⁻⁴) | 3.13 (+1.65 × 10⁻⁴) | 3.13 (+4.12 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 200 nm, index difference of the two supermodes | 0.00792 (exact) | 0.00798 (+6.14 × 10⁻⁵) | 0.00794 (+1.54 × 10⁻⁵) | 0.00793 (+3.85 × 10⁻⁶) | by construction, not evidence |
| TE-like (field across the gap), gap 200 nm, coupling length | 97.8 (exact) | 97.1 (−0.753) | 97.6 (−0.190) | 97.8 (−0.0476) | by construction, not evidence |
| TE-like (field across the gap), gap 300 nm, effective index of the even supermode | 3.13 (exact) | 3.13 (+6.98 × 10⁻⁴) | 3.13 (+1.75 × 10⁻⁴) | 3.13 (+4.37 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 300 nm, effective index of the odd supermode | 3.13 (exact) | 3.13 (+6.73 × 10⁻⁴) | 3.13 (+1.69 × 10⁻⁴) | 3.13 (+4.22 × 10⁻⁵) | by construction, not evidence |
| TE-like (field across the gap), gap 300 nm, index difference of the two supermodes | 0.00253 (exact) | 0.00255 (+2.49 × 10⁻⁵) | 0.00253 (+6.23 × 10⁻⁶) | 0.00253 (+1.56 × 10⁻⁶) | by construction, not evidence |
| TE-like (field across the gap), gap 300 nm, coupling length | 307 (exact) | 304 (−2.99) | 306 (−0.755) | 307 (−0.189) | by construction, not evidence |
| TM-like (field along the walls), gap 100 nm, effective index of the even supermode | 3.30 (exact) | 3.30 (−5.46 × 10⁻⁴) | 3.30 (−1.37 × 10⁻⁴) | 3.30 (−3.44 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 100 nm, effective index of the odd supermode | 3.25 (exact) | 3.25 (−6.04 × 10⁻⁴) | 3.25 (−1.52 × 10⁻⁴) | 3.25 (−3.81 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 100 nm, index difference of the two supermodes | 0.0560 (exact) | 0.0560 (+5.71 × 10⁻⁵) | 0.0560 (+1.46 × 10⁻⁵) | 0.0560 (+3.67 × 10⁻⁶) | by construction, not evidence |
| TM-like (field along the walls), gap 100 nm, coupling length | 13.8 (exact) | 13.8 (−0.0141) | 13.8 (−0.00362) | 13.8 (−9.09 × 10⁻⁴) | by construction, not evidence |
| TM-like (field along the walls), gap 200 nm, effective index of the even supermode | 3.28 (exact) | 3.28 (−5.88 × 10⁻⁴) | 3.28 (−1.48 × 10⁻⁴) | 3.28 (−3.70 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 200 nm, effective index of the odd supermode | 3.26 (exact) | 3.26 (−6.51 × 10⁻⁴) | 3.26 (−1.64 × 10⁻⁴) | 3.26 (−4.11 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 200 nm, index difference of the two supermodes | 0.0169 (exact) | 0.0170 (+6.37 × 10⁻⁵) | 0.0169 (+1.61 × 10⁻⁵) | 0.0169 (+4.03 × 10⁻⁶) | by construction, not evidence |
| TM-like (field along the walls), gap 200 nm, coupling length | 45.8 (exact) | 45.6 (−0.172) | 45.7 (−0.0434) | 45.8 (−0.0109) | by construction, not evidence |
| TM-like (field along the walls), gap 300 nm, effective index of the even supermode | 3.27 (exact) | 3.27 (−6.08 × 10⁻⁴) | 3.27 (−1.53 × 10⁻⁴) | 3.27 (−3.83 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 300 nm, effective index of the odd supermode | 3.27 (exact) | 3.27 (−6.43 × 10⁻⁴) | 3.27 (−1.62 × 10⁻⁴) | 3.27 (−4.05 × 10⁻⁵) | by construction, not evidence |
| TM-like (field along the walls), gap 300 nm, index difference of the two supermodes | 0.00515 (exact) | 0.00518 (+3.51 × 10⁻⁵) | 0.00516 (+8.83 × 10⁻⁶) | 0.00515 (+2.21 × 10⁻⁶) | by construction, not evidence |
| TM-like (field along the walls), gap 300 nm, coupling length | 151 (exact) | 150 (−1.02) | 150 (−0.258) | 150 (−0.0646) | by construction, not evidence |
Exact answer, computed to 23 significant figures.
Si pair in SiO₂, fixed indices: MPB
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| gap 120 nm, index difference of the two supermodes | 0.0430 ± 7.00 × 10⁻⁵ | 0.0439 (+8.68 × 10⁻⁴, outside) | 0.0434 (+3.62 × 10⁻⁴, outside) | 0.0622 (+0.0192, outside) |
| gap 120 nm, coupling length | 18.0 ± 0.0293 | 17.7 (−0.357, outside) | 17.9 (−0.150, outside) | 12.5 (−5.57, outside) |
| gap 160 nm, index difference of the two supermodes | 0.0293 ± 4.31 × 10⁻⁵ | 0.0299 (+5.99 × 10⁻⁴, outside) | 0.0296 (+2.42 × 10⁻⁴, outside) | 0.0434 (+0.0140, outside) |
| gap 160 nm, coupling length | 26.4 ± 0.0388 | 25.9 (−0.528, outside) | 26.2 (−0.216, outside) | 17.9 (−8.54, outside) |
| gap 200 nm, index difference of the two supermodes | 0.0204 ± 2.69 × 10⁻⁵ | 0.0208 (+4.23 × 10⁻⁴, outside) | 0.0206 (+1.67 × 10⁻⁴, outside) | 0.0308 (+0.0103, outside) |
| gap 200 nm, coupling length | 38.0 ± 0.0501 | 37.2 (−0.771, outside) | 37.7 (−0.307, outside) | 25.2 (−12.8, outside) |
| gap 240 nm, index difference of the two supermodes | 0.0143 ± 1.68 × 10⁻⁵ | 0.0146 (+3.03 × 10⁻⁴, outside) | 0.0144 (+1.16 × 10⁻⁴, outside) | 0.0220 (+0.00764, outside) |
| gap 240 nm, coupling length | 54.1 ± 0.0636 | 53.0 (−1.12, outside) | 53.7 (−0.435, outside) | 35.3 (−18.8, outside) |
| gap 320 nm, index difference of the two supermodes | 0.00713 ± 6.46 × 10⁻⁶ | 0.00729 (+1.58 × 10⁻⁴, outside) | 0.00719 (+5.74 × 10⁻⁵, outside) | 0.0113 (+0.00418, outside) |
| gap 320 nm, coupling length | 109 ± 0.0984 | 106 (−2.35, outside) | 108 (−0.867, outside) | 68.5 (−40.1, outside) |
| gap 400 nm, index difference of the two supermodes | 0.00358 ± 2.33 × 10⁻⁶ | 0.00366 (+8.28 × 10⁻⁵, outside) | 0.00361 (+2.88 × 10⁻⁵, outside) | 0.00585 (+0.00227, outside) |
| gap 400 nm, coupling length | 216 ± 0.141 | 212 (−4.89, outside) | 215 (−1.72, outside) | 132 (−83.9, outside) |
| gap 480 nm, index difference of the two supermodes | 0.00181 ± 6.34 × 10⁻⁷ | 0.00185 (+4.38 × 10⁻⁵, outside) | 0.00182 (+1.47 × 10⁻⁵, outside) | 0.00303 (+0.00122, outside) |
| gap 480 nm, coupling length | 429 ± 0.151 | 419 (−10.2, outside) | 426 (−3.47, outside) | 256 (−173, outside) |
| gap 640 nm, index difference of the two supermodes | 4.64 × 10⁻⁴ ± 4.37 × 10⁻⁸ | 4.77 × 10⁻⁴ (+1.22 × 10⁻⁵, outside) | 4.68 × 10⁻⁴ (+3.82 × 10⁻⁶, outside) | 8.11 × 10⁻⁴ (+3.47 × 10⁻⁴, outside) |
| gap 640 nm, coupling length | 1670 ± 0.157 | 1630 (−42.8, outside) | 1660 (−13.6, outside) | 955 (−714, outside) |
MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.
SOI Strip 220 pair (air above): MPB
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| gap 150 nm, index difference of the two supermodes | 0.0166 ± 1.08 × 10⁻⁴ | 0.0171 (+4.73 × 10⁻⁴, outside) | 0.0167 (+1.37 × 10⁻⁴, outside) | 0.0250 (+0.00844, outside) |
| gap 150 nm, coupling length | 46.7 ± 0.304 | 45.4 (−1.30, outside) | 46.3 (−0.386, outside) | 31.0 (−15.8, outside) |
| gap 200 nm, index difference of the two supermodes | 0.0103 ± 6.13 × 10⁻⁵ | 0.0107 (+4.35 × 10⁻⁴, outside) | 0.0105 (+2.10 × 10⁻⁴, outside) | 0.0155 (+0.00526, outside) |
| gap 200 nm, coupling length | 75.4 ± 0.449 | 72.3 (−3.07, outside) | 73.9 (−1.51, outside) | 49.9 (−25.5, outside) |
| gap 300 nm, index difference of the two supermodes | 0.00419 ± 1.92 × 10⁻⁵ | 0.00436 (+1.72 × 10⁻⁴, outside) | 0.00427 (+7.79 × 10⁻⁵, outside) | 0.00626 (+0.00207, outside) |
| gap 300 nm, coupling length | 185 ± 0.847 | 178 (−7.32, outside) | 182 (−3.38, outside) | 124 (−61.1, outside) |
MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.
SiN Strip 400 pair, SiO₂ above: MPB
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| gap 200 nm, index difference of the two supermodes | 0.0392 ± 6.75 × 10⁻⁶ | 0.0393 (+8.89 × 10⁻⁵, outside) | 0.0392 (+2.08 × 10⁻⁵, outside) | 0.0446 (+0.00544, outside) |
| gap 200 nm, coupling length | 19.8 ± 0.00341 | 19.7 (−0.0448, outside) | 19.8 (−0.0105, outside) | 17.4 (−2.41, outside) |
| gap 400 nm, index difference of the two supermodes | 0.0186 ± 7.84 × 10⁻⁶ | 0.0187 (+5.93 × 10⁻⁵, outside) | 0.0186 (+3.78 × 10⁻⁶, inside) | 0.0231 (+0.00451, outside) |
| gap 400 nm, coupling length | 41.6 ± 0.0175 | 41.5 (−0.132, outside) | 41.6 (−0.00844, inside) | 33.5 (−8.10, outside) |
| gap 600 nm, index difference of the two supermodes | 0.00914 ± 6.67 × 10⁻⁶ | 0.00917 (+2.92 × 10⁻⁵, outside) | 0.00914 (−2.24 × 10⁻⁶, inside) | 0.0121 (+0.00293, outside) |
| gap 600 nm, coupling length | 84.8 ± 0.0619 | 84.5 (−0.270, outside) | 84.8 (+0.0208, inside) | 64.2 (−20.6, outside) |
MPB 1.12.0, at 50 and 100 pixels per µm; the range spans its two finest resolutions.
SiN Strip 400 pair (air above): MPB
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| gap 200 nm, index difference of the two supermodes | 0.0249 ± 2.13 × 10⁻⁵ | 0.0252 (+3.20 × 10⁻⁴, outside) | 0.0251 (+1.31 × 10⁻⁴, outside) | 0.0268 (+0.00190, outside) |
| gap 200 nm, coupling length | 31.1 ± 0.0265 | 30.7 (−0.394, outside) | 30.9 (−0.162, outside) | 28.9 (−2.20, outside) |
| gap 400 nm, index difference of the two supermodes | 0.0101 ± 1.33 × 10⁻⁶ | 0.0102 (+1.25 × 10⁻⁴, outside) | too large to run at this mesh | 0.00952 (−5.27 × 10⁻⁴, outside) |
| gap 400 nm, coupling length | 77.1 ± 0.0102 | 76.2 (−0.946, outside) | too large to run at this mesh | 81.4 (+4.27, outside) |
| gap 600 nm, index difference of the two supermodes | 0.00437 ± 2.58 × 10⁻⁶ | 0.00442 (+5.18 × 10⁻⁵, outside) | too large to run at this mesh | 0.00355 (−8.24 × 10⁻⁴, outside) |
| gap 600 nm, coupling length | 177 ± 0.105 | 175 (−2.08, outside) | too large to run at this mesh | 219 (+41.2, outside) |
MPB 1.12.0, at 50 and 100 pixels per µm; the range spans its two finest resolutions.
Si pair in SiO₂, fixed indices: how the coupling changes with wavelength, MPB
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| gap 200 nm, wavelength slope of the index difference | 0.00482 ± 5.49 × 10⁻⁶ | 0.00478 (−3.95 × 10⁻⁵, outside) | not run at this level | 0.00443 (−3.85 × 10⁻⁴, outside) |
MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.
Ring over a straight bus, and both waveguides bending: Meep
Not run at this level: this check runs at the levels shown.
| Case | Reference | FDE Coarse | FDE Standard | EIM |
|---|---|---|---|---|
| ring radius 10 µm, gap 200 nm, power coupled (κ²) | 0.0140 ± 0.00154 | 0.0131 (−8.71 × 10⁻⁴, inside) | 0.0128 (−0.00121, inside) | 0.0298 (+0.0158, outside) |
| ring radius 5 µm, gap 200 nm, power coupled (κ²) | 0.00736 ± 7.82 × 10⁻⁴ | 0.00676 (−5.92 × 10⁻⁴, inside) | 0.00659 (−7.67 × 10⁻⁴, inside) | 0.0154 (+0.00804, outside) |
| 3 µm S-bends, plane +3.60 µm, power coupled (κ²) | 0.00638 ± 2.31 × 10⁻⁴ | 0.00265 (−0.00372, outside) | 0.00258 (−0.00379, outside) | no value (no model for two bending waveguides) |
| 3 µm S-bends, plane +3.80 µm, power coupled (κ²) | 0.00640 ± 2.38 × 10⁻⁴ | 0.00265 (−0.00375, outside) | 0.00258 (−0.00382, outside) | no value (no model for two bending waveguides) |
| 3 µm S-bends, plane +4.00 µm, power coupled (κ²) | 0.00642 ± 2.40 × 10⁻⁴ | 0.00265 (−0.00377, outside) | 0.00258 (−0.00384, outside) | no value (no model for two bending waveguides) |
| 6 µm S-bends, plane +6.60 µm, power coupled (κ²) | 0.0121 ± 4.21 × 10⁻⁴ | 0.0101 (−0.00199, outside) | 0.00988 (−0.00225, outside) | no value (no model for two bending waveguides) |
| 6 µm S-bends, plane +6.80 µm, power coupled (κ²) | 0.0121 ± 4.20 × 10⁻⁴ | 0.0101 (−0.00199, outside) | 0.00988 (−0.00225, outside) | no value (no model for two bending waveguides) |
| 6 µm S-bends, plane +7.00 µm, power coupled (κ²) | 0.0121 ± 4.14 × 10⁻⁴ | 0.0101 (−0.00198, outside) | 0.00988 (−0.00224, outside) | no value (no model for two bending waveguides) |
Meep 1.34.0, a full 3D simulation, at 50 pixels per µm. The range spans two ways of drawing the curved walls on the grid, at that one resolution.