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SummaryAgainst an exact answer: how the error shrinks with the meshStraight couplers against MPB: coupling lengthCurved couplers against a full 3D simulation: κ²EIM or FDE: when the free engine is enoughLimitsData and how it was producedAppendix: every comparison

Benchmark

PIC Directional Coupler Simulator: benchmark

How accurate is it? The PIC Directional Coupler Simulator designs couplers between two waveguides. It computes how strongly they couple: the difference Δn between the effective indices of the two modes the pair shares, the coupling length L_c over which light crosses fully to the other waveguide, and κ², the fraction of the power that crosses, for straight couplers and for curved ones such as a ring passing its bus. It has two engines. EIM ("Effective index" in the tool's engine menu), the effective index method, is free and runs in your browser. FDE ("Full-vectorial" in the menu), a finite-difference mode solver that keeps every field component, is paid and runs on our servers, at three mesh levels: Coarse (the default), Standard and Fine. This page measures both against an exact answer and against two free, independent programs, MPB and Meep, which we ran ourselves.

PIC Directional Coupler Simulator

Short answer: FDE's coupling length is within 4.1 % of an independent mode solver's at the default Coarse mesh and within 2.1 % at Standard. For a ring passing its bus, FDE's κ² falls inside the range of a full 3D simulation, which is up to ±11 % there. On four values, all with air above, FDE's difference from the mode solver is larger than the accuracy the tool prints for that design, and we have not found why. EIM's coupling length is off by up to 43 %, so use it to explore, and FDE to set a length.

Summary

  1. Exact answer. For two flat silicon slabs side by side, whose coupling follows from an exact equation, FDE's error shrinks at each finer mesh level on all 24 comparisons, and its coupling length is within 0.98 % of the exact answer at Coarse.
  2. Independent mode solver, straight couplers. On 18 values from straight silicon and silicon nitride couplers, FDE at its finest mesh differs from MPB by 0.813 % typically and 2.01 % at most, on the SOI Strip 220 pair in air with a 200 nm gap; see Limits. On 2 of the 18 it lands inside MPB's own range.
  3. Full 3D simulation, a ring passing its bus. At ring radii of 10 and 5 µm, FDE's κ² at Coarse and at Standard lands inside Meep's range in both cases.
  4. Where it is less accurate. When both waveguides bend into the coupler, FDE's κ² is too low: 59.5 to 59.8 % below Meep's value on the 3 µm S-bends and 18.5 to 18.6 % below on the 6 µm ones, at Standard. On such a design the tool cautions that the bends couple more than its estimate includes, by an amount measured in 3D on this same pair of waveguides; that is a correction, not a separate check. For a ring passing its bus, FDE's κ² is −8.63 % and −10.4 % from Meep's value at 10 and 5 µm: both below it, the same direction as the S-bend shortfall, but inside Meep's range of up to ±11 %, so this comparison is inconclusive there; Meep at a second resolution on one ring would tell. EIM has no model for both waveguides bending. When EIM is enough

On every value where both engines give a number, FDE at its finest mesh is at least as close to the reference as EIM.

An independent program's answer also shifts a little with its own settings. Its range is that shift at its finest settings, and the record prints every difference, inside it or outside it.

Against an exact answer: how the error shrinks with the mesh

Two flat silicon slabs side by side have a coupling that follows from an exact equation. We solve them with FDE at its three mesh levels and compare with the exact answer, computed to 23 significant figures. Table 1 lists the coupling length; Figure 1 shows how the error falls as the cells get smaller.

SiSiSiO₂w 500 nmgap 100, 200, 300 nmn 3.4760 / 1.4440
Two flat silicon slabs in SiO₂

Two 500 nm silicon slabs (n 3.476) in SiO₂ (n 1.444), side by side with gaps of 100, 200 and 300 nm, filling a closed 2 µm high box, at 1550 nm; light polarized across the gap (TE-like) and along the walls (TM-like).

Open a silicon coupler in the tool

Table 1. Coupling length of two flat silicon slabs, against the exact answer

PolarizationGap (nm)Exact L_c (µm)FDE error, CoarseStandardFine
TE-like (field across the gap)10029.3−0.575 %−0.145 %−0.0363 %
TE-like (field across the gap)20097.8−0.769 %−0.194 %−0.0486 %
TE-like (field across the gap)300307−0.976 %−0.246 %−0.0617 %
TM-like (field along the walls)10013.8−0.102 %−0.0261 %−0.00657 %
TM-like (field along the walls)20045.8−0.375 %−0.0949 %−0.0238 %
TM-like (field along the walls)300151−0.677 %−0.171 %−0.0429 %

FDE's coupling length is within 0.98 % of the exact answer at Coarse, 0.25 % at Standard and 0.062 % at Fine; each halving of the cell size cuts the error about fourfold.

Figure 1. FDE's coupling length for two flat silicon slabs against the exact answer at three mesh levels. The exact answer carries no visible range (computed to 23 significant figures).
10⁻³10⁻²10⁻¹151020Cell size (nm)Error in coupling length (% of exact)
  • gap 100 nm
  • gap 200 nm
  • gap 300 nm
  • TE-like
  • TM-like

Straight couplers against MPB: coupling length

MPB is a free, open-source mode solver from MIT. We solved each straight pair with it at resolutions up to 200 pixels per µm. Its range is how much its answer still moves at its finest settings. Table 2 gives MPB's coupling length and FDE's difference from it at Coarse and Standard; the last column is the accuracy the tool itself prints on that design. Figure 2 plots both.

Si pair in SiO₂, fixed indices

w 500 nmgap 120–640 nmt 220 nmSiSiO₂500 nm

Two 500 × 220 nm silicon strips (n 3.476) in SiO₂ (n 1.444), gaps from 120 to 640 nm, 1550 nm, TE.

Open a similar design (dispersive materials; this comparison used fixed indices)

SOI Strip 220 pair (air above)

w 500 nmgap 150–300 nmt 220 nmSiAirSiO₂500 nm

Two SOI Strip 220 waveguides (500 × 220 nm silicon on SiO₂, air above), gaps of 150, 200 and 300 nm, 1550 nm, TE.

Open this case in the tool

SiN Strip 400 pair, SiO₂ above

w 1000 nmgap 200–600 nmt 400 nmSi₃N₄SiO₂1000 nm

Two 1000 × 400 nm silicon nitride strips on SiO₂ with SiO₂ above, gaps of 200, 400 and 600 nm, 1550 nm, TE.

Open this case in the tool

SiN Strip 400 pair (air above)

w 1000 nmgap 200–600 nmt 400 nmSi₃N₄AirSiO₂1000 nm

Two 1000 × 400 nm silicon nitride strips on SiO₂ with air above, gaps of 200, 400 and 600 nm, 1550 nm, TE.

Open this case in the tool

Table 2. FDE's coupling length against MPB

CouplerGap (nm)MPB L_c (µm)MPB range (± %)FDE − MPB, CoarseFDE − MPB, StandardAccuracy the tool prints (Coarse; Standard)
Si pair in SiO₂, fixed indices12018.00.163−1.98 % (outside)−0.834 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices16026.40.147−2.00 % (outside)−0.819 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices20038.00.132−2.03 % (outside)−0.810 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices24054.10.118−2.07 % (outside)−0.804 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices3201090.0906−2.16 % (outside)−0.798 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices4002160.0651−2.26 % (outside)−0.797 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices4804290.0351−2.37 % (outside)−0.808 % (outside)none (fixed indices)
Si pair in SiO₂, fixed indices64016700.00941−2.57 % (outside)−0.816 % (outside)none (fixed indices)
SOI Strip 220 pair (air above)15046.70.650−2.77 % (outside)−0.826 % (outside)within 4 %; within 1 %
SOI Strip 220 pair (air above)20075.40.596−4.07 % (outside) *−2.01 % (outside) *within 4 %; within 1 %
SOI Strip 220 pair (air above)3001850.458−3.95 % (outside)−1.83 % (outside) *within 4 %; within 1 %
SiN Strip 400 pair, SiO₂ above20019.80.0172−0.227 % (outside)−0.0530 % (outside)within 2 %; within 0.4 %
SiN Strip 400 pair, SiO₂ above40041.60.0421−0.317 % (outside)−0.0203 % (inside)within 2 %; within 0.4 %
SiN Strip 400 pair, SiO₂ above60084.80.0730−0.318 % (outside)+0.0245 % (inside)within 2 %; within 0.4 %
SiN Strip 400 pair (air above)20031.10.0853−1.27 % (outside)−0.521 % (outside) *within 2 %; within 0.4 %
SiN Strip 400 pair (air above)40077.10.0132−1.23 % (outside)too large to run at this meshwithin 2 %; (not run)
SiN Strip 400 pair (air above)6001770.0590−1.17 % (outside)too large to run at this meshwithin 2 %; (not run)

* larger than the accuracy the tool prints for that design

On the silicon pairs in SiO₂, FDE's coupling length is within 2.6 % of MPB's at Coarse and 0.84 % at Standard, at every gap from 120 to 640 nm. On the silicon nitride pairs in SiO₂ it is within 0.32 % and 0.054 %, inside MPB's range at Standard at 400 and 600 nm. In air the differences are larger: within 4.1 % and 2.1 % on the silicon pairs; on the silicon nitride pairs within 1.3 % at Coarse, and 0.53 % at 200 nm, the one gap that ran at Standard.

On four values, marked * in the table, the difference from MPB is larger than the accuracy the tool prints for that design; see Limits.

Figure 2. Coupling length of straight pairs: FDE at Coarse and Standard against MPB; gray, MPB's own range; dashed, the accuracy the tool prints at each level.
(a) Coupling length10100100010⁴200400600Gap (nm)Coupling length (µm)

(b) FDE − MPB

■ Si pair in SiO₂, fixed indices−2−10500Gap (nm)FDE − MPB (% of MPB's value)■ SOI Strip 220 pair (air above)−505150200300Gap (nm)FDE − MPB (% of MPB's value)■ SiN Strip 400 pair, SiO₂ above−202200400600Gap (nm)FDE − MPB (% of MPB's value)■ SiN Strip 400 pair (air above)−202200400600Gap (nm)FDE − MPB (% of MPB's value)too large to run at this meshtoo large to run at this mesh
  • MPB
  • FDE Coarse
  • FDE Standard
  • MPB's range
  • Accuracy the tool prints, Coarse
  • Accuracy the tool prints, Standard
  • too large to run at this mesh

How fast the coupling changes with wavelength sets a coupler's bandwidth. On the silicon pair in SiO₂ with a 200 nm gap, FDE at Coarse gets it −0.819 % from MPB's value, and EIM −7.98 %.

Table 3. How the coupling changes with wavelength, d ln Δn / dλ

CouplerGap (nm)MPB value (per nm)MPB range (± %)FDE − MPB, CoarseEIM − MPB
Si pair in SiO₂, fixed indices2000.004820.114−0.819 % (outside)−7.98 % (outside)

Curved couplers against a full 3D simulation: κ²

Meep is a free, open-source electromagnetic simulator from MIT. We used it to simulate whole curved couplers in 3D at 50 pixels per µm, twice: once with the curved walls drawn on the grid as a staircase, once smoothed. Meep's value is the middle of the two; its range is half their spread. Both programs used the same fixed indices. Table 4 covers a ring passing a straight bus; Table 5, couplers whose two waveguides both bend.

Ring over a straight bus
w 500 nmgap 200 nmt 220 nmSiSiO₂500 nm
inthroughcrossgap 200 nmR = 10 or 5 µm2 µm

Two 500 × 220 nm silicon waveguides (n 3.476) in SiO₂ (n 1.444) at 1550 nm, TE: a ring of 10 or 5 µm radius passing a straight bus, 200 nm apart at the closest point.

Open a similar design (dispersive materials; this comparison used fixed indices)
Both waveguides bending
w 500 nmgap 200 nmt 220 nmSiSiO₂500 nm
inthroughcrossgap 200 nmL = 3 or 6 µmmoves 0.5 µm1 µm

plane +3.60 to +4.00 or +6.60 to +7.00 µm

The same waveguides, 200 nm apart at the closest point, each bending away from the other in a raised-cosine S-bend that moves it 0.5 µm sideways over 3 µm or over 6 µm (the 3 µm and 6 µm S-bends). Meep measures κ² at three planes past the bends.

Open a similar design (dispersive materials; this comparison used fixed indices)

Table 4. κ² of a ring passing a straight bus, against Meep

Ring radius (µm)Gap (nm)Meep κ²Meep range (± %)FDE CoarseFDE StandardEIM
102000.014011.00.0131 (−6.22 %, inside)0.0128 (−8.63 %, inside)0.0298 (+113 %, outside)
52000.0073610.60.00676 (−8.05 %, inside)0.00659 (−10.4 %, inside)0.0154 (+109 %, outside)

At both radii FDE lands inside Meep's range at Coarse and at Standard, below Meep's value: −8.63 % at 10 µm and −10.4 % at 5 µm at Standard. Meep's own range there is up to ±11 % (two ways of drawing the curved walls), so this comparison cannot resolve FDE's κ² more finely than that.

Table 5. κ² when both waveguides bend, against Meep

S-bendsPlane (µm)Meep κ²Meep range (± %)FDE κ² (Coarse; Standard)FDE − Meep (Coarse; Standard)κ² with the tool's correction (Coarse; Standard)
3 µm S-bends (each guide moves 0.5 µm)+3.600.006383.630.00265; 0.00258−58.4 %; −59.5 %0.00616 to 0.00771; 0.00600 to 0.00751
3 µm S-bends (each guide moves 0.5 µm)+3.800.006403.710.00265; 0.00258−58.6 %; −59.6 %0.00616 to 0.00771; 0.00600 to 0.00751
3 µm S-bends (each guide moves 0.5 µm)+4.000.006423.730.00265; 0.00258−58.7 %; −59.8 %0.00616 to 0.00771; 0.00600 to 0.00751
6 µm S-bends (each guide moves 0.5 µm)+6.600.01213.470.0101; 0.00988−16.4 %; −18.6 %0.0116 to 0.0144; 0.0113 to 0.0140
6 µm S-bends (each guide moves 0.5 µm)+6.800.01213.460.0101; 0.00988−16.4 %; −18.6 %0.0116 to 0.0144; 0.0113 to 0.0140
6 µm S-bends (each guide moves 0.5 µm)+7.000.01213.420.0101; 0.00988−16.4 %; −18.5 %0.0116 to 0.0144; 0.0113 to 0.0140

Plane: where κ² is read, in µm from the closest point of the two waveguides toward the output ports.

FDE adds up the coupling along the gap as drawn, so it leaves out the extra coupling the bends themselves add: its κ² is 59.5 to 59.8 % below Meep's on the 3 µm S-bends and 18.5 to 18.6 % below on the 6 µm ones, at Standard. On such a design the tool cautions that the bends couple more than its estimate includes, by an amount measured in 3D on a reference pair of these same waveguides, Meep's run among them, and prints the κ² that extra coupling would give; the last column shows it.

Figure 3. κ² of curved couplers: FDE at Coarse and Standard and EIM against Meep's 3D simulation; bars, Meep's range (two ways of drawing the curved walls); band, the κ² the tool gives with its correction when both waveguides bend.
10⁻³10⁻²10⁻¹ring R 10 µmring R 5 µm3 µm S-bends6 µm S-bendsRing radius or S-bend lengthκ²
  • Meep
  • FDE Coarse
  • FDE Standard
  • EIM
  • with the tool's correction

EIM or FDE: when the free engine is enough

EIM replaces each waveguide's cross-section by two one-dimensional layer problems and builds the pair from them. It runs instantly in your browser. Table 6 puts EIM and FDE (finest level run) against the same references, as a percentage of the reference value.

  • EIM is for exploring: its coupling length is off by up to 43 % here, so set a length with FDE.
  • Silicon pairs: EIM's coupling length is too short by 30.9 to 42.8 % on the pairs in SiO₂, more at wider gaps, and by 33.0 to 33.9 % on the pairs in air.
  • Silicon nitride pairs: in SiO₂ it is too short by 12.2 to 24.3 %. In air its error changes sign with the gap: −7.08, +5.53, +23.2 % at 200, 400 and 600 nm, so no single correction fixes it.
  • Ring passing a bus: EIM's κ² is more than double Meep's value: +113 % at 10 µm and +109 % at 5 µm.
  • Wavelength dependence: EIM's slope of the coupling with wavelength is −7.98 % from MPB's, FDE's −0.819 %.
  • Both waveguides bending: EIM has no model for this shape and prints no coupling.

Table 6. EIM and FDE against the same references

CouplerQuantityReferenceEIM − referenceFDE (finest level run) − reference
Si pair in SiO₂, fixed indices, gap 120 nmcoupling lengthMPB−30.9 %−0.834 % (Standard)
Si pair in SiO₂, fixed indices, gap 160 nmcoupling lengthMPB−32.3 %−0.819 % (Standard)
Si pair in SiO₂, fixed indices, gap 200 nmcoupling lengthMPB−33.6 %−0.810 % (Standard)
Si pair in SiO₂, fixed indices, gap 240 nmcoupling lengthMPB−34.8 %−0.804 % (Standard)
Si pair in SiO₂, fixed indices, gap 320 nmcoupling lengthMPB−36.9 %−0.798 % (Standard)
Si pair in SiO₂, fixed indices, gap 400 nmcoupling lengthMPB−38.8 %−0.797 % (Standard)
Si pair in SiO₂, fixed indices, gap 480 nmcoupling lengthMPB−40.4 %−0.808 % (Standard)
Si pair in SiO₂, fixed indices, gap 640 nmcoupling lengthMPB−42.8 %−0.816 % (Standard)
SOI Strip 220 pair (air above), gap 150 nmcoupling lengthMPB−33.7 %−0.826 % (Standard)
SOI Strip 220 pair (air above), gap 200 nmcoupling lengthMPB−33.9 %−2.01 % (Standard)
SOI Strip 220 pair (air above), gap 300 nmcoupling lengthMPB−33.0 %−1.83 % (Standard)
SiN Strip 400 pair, SiO₂ above, gap 200 nmcoupling lengthMPB−12.2 %−0.0530 % (Standard)
SiN Strip 400 pair, SiO₂ above, gap 400 nmcoupling lengthMPB−19.5 %−0.0203 % (Standard)
SiN Strip 400 pair, SiO₂ above, gap 600 nmcoupling lengthMPB−24.3 %+0.0245 % (Standard)
SiN Strip 400 pair (air above), gap 200 nmcoupling lengthMPB−7.08 %−0.521 % (Standard)
SiN Strip 400 pair (air above), gap 400 nmcoupling lengthMPB+5.53 %−1.23 % (Coarse)
SiN Strip 400 pair (air above), gap 600 nmcoupling lengthMPB+23.2 %−1.17 % (Coarse)
Si pair in SiO₂, fixed indices, gap 200 nmhow the coupling changes with wavelengthMPB−7.98 %−0.819 % (Coarse)
Ring of 10 µm radius over a bus, gap 200 nmpower coupled (κ²)Meep+113 %−8.63 % (Standard)
Ring of 5 µm radius over a bus, gap 200 nmpower coupled (κ²)Meep+109 %−10.4 % (Standard)
Figure 4. How far each engine lands from the reference, as a percentage of it; each reference's range is in Tables 2, 3 and 4.
Si pair in SiO₂, fixed indices, gap 120 nmSi pair in SiO₂, fixed indices, gap 160 nmSi pair in SiO₂, fixed indices, gap 200 nmSi pair in SiO₂, fixed indices, gap 240 nmSi pair in SiO₂, fixed indices, gap 320 nmSi pair in SiO₂, fixed indices, gap 400 nmSi pair in SiO₂, fixed indices, gap 480 nmSi pair in SiO₂, fixed indices, gap 640 nmSOI Strip 220 pair (air above), gap 150 nmSOI Strip 220 pair (air above), gap 200 nmSOI Strip 220 pair (air above), gap 300 nmSiN Strip 400 pair, SiO₂ above, gap 200 nmSiN Strip 400 pair, SiO₂ above, gap 400 nmSiN Strip 400 pair, SiO₂ above, gap 600 nmSiN Strip 400 pair (air above), gap 200 nmSiN Strip 400 pair (air above), gap 400 nmSiN Strip 400 pair (air above), gap 600 nmSi pair in SiO₂, fixed indices, gap 200 nmRing of 10 µm radius over a bus, gap 200 nmRing of 5 µm radius over a bus, gap 200 nmSilicon pairsSilicon nitride pairsWavelength slopeRings10⁻²1100Difference from the reference (% of its value)
  • EIM
  • FDE (finest level run)

Limits

  • Two couplers did not run at Standard. The silicon nitride pairs in air with 400 and 600 nm gaps need a solve window at that mesh larger than our servers accept, and the tool refuses them the same way before starting. They ran at Coarse, as Table 2 shows. This is a limit on what runs, not on accuracy.
  • Against the accuracy the tool prints. On four values with air above, FDE's coupling length differs from MPB's by more than the figure the tool prints for that design: the SOI Strip 220 pair (air above) at 200 nm, −4.07 % at Coarse against "within 4 %"; the SOI Strip 220 pair (air above) at 200 nm, −2.01 % at Standard against "within 1 %"; the SOI Strip 220 pair (air above) at 300 nm, −1.83 % at Standard against "within 1 %"; the SiN Strip 400 pair (air above) at 200 nm, −0.521 % at Standard against "within 0.4 %". That figure measures how far FDE's answer at a mesh level is from its own answer on finer meshes, measured on silicon and silicon nitride pairs with a 200 nm gap; it is not a comparison with another program. On each of these values MPB was still moving toward FDE between its two finest resolutions, and on the silicon pairs in air MPB's range is ±0.458 to ±0.650 %, against ±0.00941 to ±0.163 % on the pairs in SiO₂. With air above, the field jumps more sharply at the waveguides' top faces and across the gap, where any solver on a grid, MPB included, converges slowest, so MPB's range there is probably too narrow. That is our reading, not a measurement.
  • Fine is not tested here. The tool offers Coarse, Standard and Fine; we ran Coarse and Standard on every coupler, and Coarse only for the wavelength slope.
  • The references have their own ranges. Meep ran at one resolution, 50 pixels per µm, with two ways of drawing the curved walls; its range is their spread, not a resolution study. MPB's range is set from its two finest resolutions.
  • Fixed indices. The silicon pairs in SiO₂, the wavelength slope, the rings and the S-bends used fixed indices (3.476 for silicon, 1.444 for SiO₂) in both programs. The design each one opens uses the tool's wavelength-dependent materials, which differ slightly.
  • Shapes the tool cannot draw. The exact slabs ran on FDE's solver directly, not through the tool; they show the solver's accuracy, not a design you can open.
  • Evidence from the rule that links coupling length to power transfer. The tool's model is built on that rule, so a check of it would pass by construction.
  • The coupling length of a coupler you fabricate, closer than its gap tolerance allows.
  • The coupling of a curved coupler more precisely than the 3D simulation's own range.
  • S-bend shapes other than the two measured.

Data and how it was produced

Every coupler the tool can draw ran through the same path a design takes in the tool: the same input checks, the same solver and the same mesh rule, with fixed-index materials where the comparison used them. The exact slabs, which it cannot draw, ran on the same solver directly. We ran both engines on October 21, 2026, and ran MPB 1.12.0 and Meep 1.34.0 ourselves at the resolutions each table names; the exact answers were computed with separate code, to 23 significant figures. Every number on this page is read from one data file, whose SHA-256 fingerprint is d16f41d1…, and a separate program recomputes every comparison from its raw values before the page is published.

Download the data file (JSON)

Appendix: every comparison

Every value behind the tables above, at three significant figures; the data file has every digit. In brackets after each FDE value: its error against an exact answer, or its difference from the reference's value and whether it lies inside or outside the reference's range. EIM likewise, or why it has no value.

Two flat silicon slabs in SiO₂, in a closed 2 µm box: exact answer

CaseReferenceFDE CoarseFDE StandardFDE FineEIM
TE-like (field across the gap), gap 100 nm, effective index of the even supermode3.15 (exact)3.15 (+7.88 × 10⁻⁴)3.15 (+1.97 × 10⁻⁴)3.15 (+4.94 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 100 nm, effective index of the odd supermode3.12 (exact)3.12 (+6.35 × 10⁻⁴)3.12 (+1.59 × 10⁻⁴)3.12 (+3.97 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 100 nm, index difference of the two supermodes0.0265 (exact)0.0266 (+1.53 × 10⁻⁴)0.0265 (+3.84 × 10⁻⁵)0.0265 (+9.61 × 10⁻⁶)by construction, not evidence
TE-like (field across the gap), gap 100 nm, coupling length29.3 (exact)29.1 (−0.168)29.2 (−0.0424)29.3 (−0.0106)by construction, not evidence
TE-like (field across the gap), gap 200 nm, effective index of the even supermode3.13 (exact)3.13 (+7.20 × 10⁻⁴)3.13 (+1.80 × 10⁻⁴)3.13 (+4.51 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 200 nm, effective index of the odd supermode3.13 (exact)3.13 (+6.58 × 10⁻⁴)3.13 (+1.65 × 10⁻⁴)3.13 (+4.12 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 200 nm, index difference of the two supermodes0.00792 (exact)0.00798 (+6.14 × 10⁻⁵)0.00794 (+1.54 × 10⁻⁵)0.00793 (+3.85 × 10⁻⁶)by construction, not evidence
TE-like (field across the gap), gap 200 nm, coupling length97.8 (exact)97.1 (−0.753)97.6 (−0.190)97.8 (−0.0476)by construction, not evidence
TE-like (field across the gap), gap 300 nm, effective index of the even supermode3.13 (exact)3.13 (+6.98 × 10⁻⁴)3.13 (+1.75 × 10⁻⁴)3.13 (+4.37 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 300 nm, effective index of the odd supermode3.13 (exact)3.13 (+6.73 × 10⁻⁴)3.13 (+1.69 × 10⁻⁴)3.13 (+4.22 × 10⁻⁵)by construction, not evidence
TE-like (field across the gap), gap 300 nm, index difference of the two supermodes0.00253 (exact)0.00255 (+2.49 × 10⁻⁵)0.00253 (+6.23 × 10⁻⁶)0.00253 (+1.56 × 10⁻⁶)by construction, not evidence
TE-like (field across the gap), gap 300 nm, coupling length307 (exact)304 (−2.99)306 (−0.755)307 (−0.189)by construction, not evidence
TM-like (field along the walls), gap 100 nm, effective index of the even supermode3.30 (exact)3.30 (−5.46 × 10⁻⁴)3.30 (−1.37 × 10⁻⁴)3.30 (−3.44 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 100 nm, effective index of the odd supermode3.25 (exact)3.25 (−6.04 × 10⁻⁴)3.25 (−1.52 × 10⁻⁴)3.25 (−3.81 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 100 nm, index difference of the two supermodes0.0560 (exact)0.0560 (+5.71 × 10⁻⁵)0.0560 (+1.46 × 10⁻⁵)0.0560 (+3.67 × 10⁻⁶)by construction, not evidence
TM-like (field along the walls), gap 100 nm, coupling length13.8 (exact)13.8 (−0.0141)13.8 (−0.00362)13.8 (−9.09 × 10⁻⁴)by construction, not evidence
TM-like (field along the walls), gap 200 nm, effective index of the even supermode3.28 (exact)3.28 (−5.88 × 10⁻⁴)3.28 (−1.48 × 10⁻⁴)3.28 (−3.70 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 200 nm, effective index of the odd supermode3.26 (exact)3.26 (−6.51 × 10⁻⁴)3.26 (−1.64 × 10⁻⁴)3.26 (−4.11 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 200 nm, index difference of the two supermodes0.0169 (exact)0.0170 (+6.37 × 10⁻⁵)0.0169 (+1.61 × 10⁻⁵)0.0169 (+4.03 × 10⁻⁶)by construction, not evidence
TM-like (field along the walls), gap 200 nm, coupling length45.8 (exact)45.6 (−0.172)45.7 (−0.0434)45.8 (−0.0109)by construction, not evidence
TM-like (field along the walls), gap 300 nm, effective index of the even supermode3.27 (exact)3.27 (−6.08 × 10⁻⁴)3.27 (−1.53 × 10⁻⁴)3.27 (−3.83 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 300 nm, effective index of the odd supermode3.27 (exact)3.27 (−6.43 × 10⁻⁴)3.27 (−1.62 × 10⁻⁴)3.27 (−4.05 × 10⁻⁵)by construction, not evidence
TM-like (field along the walls), gap 300 nm, index difference of the two supermodes0.00515 (exact)0.00518 (+3.51 × 10⁻⁵)0.00516 (+8.83 × 10⁻⁶)0.00515 (+2.21 × 10⁻⁶)by construction, not evidence
TM-like (field along the walls), gap 300 nm, coupling length151 (exact)150 (−1.02)150 (−0.258)150 (−0.0646)by construction, not evidence

Exact answer, computed to 23 significant figures.

Si pair in SiO₂, fixed indices: MPB

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
gap 120 nm, index difference of the two supermodes0.0430 ± 7.00 × 10⁻⁵0.0439 (+8.68 × 10⁻⁴, outside)0.0434 (+3.62 × 10⁻⁴, outside)0.0622 (+0.0192, outside)
gap 120 nm, coupling length18.0 ± 0.029317.7 (−0.357, outside)17.9 (−0.150, outside)12.5 (−5.57, outside)
gap 160 nm, index difference of the two supermodes0.0293 ± 4.31 × 10⁻⁵0.0299 (+5.99 × 10⁻⁴, outside)0.0296 (+2.42 × 10⁻⁴, outside)0.0434 (+0.0140, outside)
gap 160 nm, coupling length26.4 ± 0.038825.9 (−0.528, outside)26.2 (−0.216, outside)17.9 (−8.54, outside)
gap 200 nm, index difference of the two supermodes0.0204 ± 2.69 × 10⁻⁵0.0208 (+4.23 × 10⁻⁴, outside)0.0206 (+1.67 × 10⁻⁴, outside)0.0308 (+0.0103, outside)
gap 200 nm, coupling length38.0 ± 0.050137.2 (−0.771, outside)37.7 (−0.307, outside)25.2 (−12.8, outside)
gap 240 nm, index difference of the two supermodes0.0143 ± 1.68 × 10⁻⁵0.0146 (+3.03 × 10⁻⁴, outside)0.0144 (+1.16 × 10⁻⁴, outside)0.0220 (+0.00764, outside)
gap 240 nm, coupling length54.1 ± 0.063653.0 (−1.12, outside)53.7 (−0.435, outside)35.3 (−18.8, outside)
gap 320 nm, index difference of the two supermodes0.00713 ± 6.46 × 10⁻⁶0.00729 (+1.58 × 10⁻⁴, outside)0.00719 (+5.74 × 10⁻⁵, outside)0.0113 (+0.00418, outside)
gap 320 nm, coupling length109 ± 0.0984106 (−2.35, outside)108 (−0.867, outside)68.5 (−40.1, outside)
gap 400 nm, index difference of the two supermodes0.00358 ± 2.33 × 10⁻⁶0.00366 (+8.28 × 10⁻⁵, outside)0.00361 (+2.88 × 10⁻⁵, outside)0.00585 (+0.00227, outside)
gap 400 nm, coupling length216 ± 0.141212 (−4.89, outside)215 (−1.72, outside)132 (−83.9, outside)
gap 480 nm, index difference of the two supermodes0.00181 ± 6.34 × 10⁻⁷0.00185 (+4.38 × 10⁻⁵, outside)0.00182 (+1.47 × 10⁻⁵, outside)0.00303 (+0.00122, outside)
gap 480 nm, coupling length429 ± 0.151419 (−10.2, outside)426 (−3.47, outside)256 (−173, outside)
gap 640 nm, index difference of the two supermodes4.64 × 10⁻⁴ ± 4.37 × 10⁻⁸4.77 × 10⁻⁴ (+1.22 × 10⁻⁵, outside)4.68 × 10⁻⁴ (+3.82 × 10⁻⁶, outside)8.11 × 10⁻⁴ (+3.47 × 10⁻⁴, outside)
gap 640 nm, coupling length1670 ± 0.1571630 (−42.8, outside)1660 (−13.6, outside)955 (−714, outside)

MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.

SOI Strip 220 pair (air above): MPB

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
gap 150 nm, index difference of the two supermodes0.0166 ± 1.08 × 10⁻⁴0.0171 (+4.73 × 10⁻⁴, outside)0.0167 (+1.37 × 10⁻⁴, outside)0.0250 (+0.00844, outside)
gap 150 nm, coupling length46.7 ± 0.30445.4 (−1.30, outside)46.3 (−0.386, outside)31.0 (−15.8, outside)
gap 200 nm, index difference of the two supermodes0.0103 ± 6.13 × 10⁻⁵0.0107 (+4.35 × 10⁻⁴, outside)0.0105 (+2.10 × 10⁻⁴, outside)0.0155 (+0.00526, outside)
gap 200 nm, coupling length75.4 ± 0.44972.3 (−3.07, outside)73.9 (−1.51, outside)49.9 (−25.5, outside)
gap 300 nm, index difference of the two supermodes0.00419 ± 1.92 × 10⁻⁵0.00436 (+1.72 × 10⁻⁴, outside)0.00427 (+7.79 × 10⁻⁵, outside)0.00626 (+0.00207, outside)
gap 300 nm, coupling length185 ± 0.847178 (−7.32, outside)182 (−3.38, outside)124 (−61.1, outside)

MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.

SiN Strip 400 pair, SiO₂ above: MPB

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
gap 200 nm, index difference of the two supermodes0.0392 ± 6.75 × 10⁻⁶0.0393 (+8.89 × 10⁻⁵, outside)0.0392 (+2.08 × 10⁻⁵, outside)0.0446 (+0.00544, outside)
gap 200 nm, coupling length19.8 ± 0.0034119.7 (−0.0448, outside)19.8 (−0.0105, outside)17.4 (−2.41, outside)
gap 400 nm, index difference of the two supermodes0.0186 ± 7.84 × 10⁻⁶0.0187 (+5.93 × 10⁻⁵, outside)0.0186 (+3.78 × 10⁻⁶, inside)0.0231 (+0.00451, outside)
gap 400 nm, coupling length41.6 ± 0.017541.5 (−0.132, outside)41.6 (−0.00844, inside)33.5 (−8.10, outside)
gap 600 nm, index difference of the two supermodes0.00914 ± 6.67 × 10⁻⁶0.00917 (+2.92 × 10⁻⁵, outside)0.00914 (−2.24 × 10⁻⁶, inside)0.0121 (+0.00293, outside)
gap 600 nm, coupling length84.8 ± 0.061984.5 (−0.270, outside)84.8 (+0.0208, inside)64.2 (−20.6, outside)

MPB 1.12.0, at 50 and 100 pixels per µm; the range spans its two finest resolutions.

SiN Strip 400 pair (air above): MPB

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
gap 200 nm, index difference of the two supermodes0.0249 ± 2.13 × 10⁻⁵0.0252 (+3.20 × 10⁻⁴, outside)0.0251 (+1.31 × 10⁻⁴, outside)0.0268 (+0.00190, outside)
gap 200 nm, coupling length31.1 ± 0.026530.7 (−0.394, outside)30.9 (−0.162, outside)28.9 (−2.20, outside)
gap 400 nm, index difference of the two supermodes0.0101 ± 1.33 × 10⁻⁶0.0102 (+1.25 × 10⁻⁴, outside)too large to run at this mesh0.00952 (−5.27 × 10⁻⁴, outside)
gap 400 nm, coupling length77.1 ± 0.010276.2 (−0.946, outside)too large to run at this mesh81.4 (+4.27, outside)
gap 600 nm, index difference of the two supermodes0.00437 ± 2.58 × 10⁻⁶0.00442 (+5.18 × 10⁻⁵, outside)too large to run at this mesh0.00355 (−8.24 × 10⁻⁴, outside)
gap 600 nm, coupling length177 ± 0.105175 (−2.08, outside)too large to run at this mesh219 (+41.2, outside)

MPB 1.12.0, at 50 and 100 pixels per µm; the range spans its two finest resolutions.

Si pair in SiO₂, fixed indices: how the coupling changes with wavelength, MPB

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
gap 200 nm, wavelength slope of the index difference0.00482 ± 5.49 × 10⁻⁶0.00478 (−3.95 × 10⁻⁵, outside)not run at this level0.00443 (−3.85 × 10⁻⁴, outside)

MPB 1.12.0, at 100 and 200 pixels per µm; the range spans its two finest resolutions.

Ring over a straight bus, and both waveguides bending: Meep

Not run at this level: this check runs at the levels shown.

CaseReferenceFDE CoarseFDE StandardEIM
ring radius 10 µm, gap 200 nm, power coupled (κ²)0.0140 ± 0.001540.0131 (−8.71 × 10⁻⁴, inside)0.0128 (−0.00121, inside)0.0298 (+0.0158, outside)
ring radius 5 µm, gap 200 nm, power coupled (κ²)0.00736 ± 7.82 × 10⁻⁴0.00676 (−5.92 × 10⁻⁴, inside)0.00659 (−7.67 × 10⁻⁴, inside)0.0154 (+0.00804, outside)
3 µm S-bends, plane +3.60 µm, power coupled (κ²)0.00638 ± 2.31 × 10⁻⁴0.00265 (−0.00372, outside)0.00258 (−0.00379, outside)no value (no model for two bending waveguides)
3 µm S-bends, plane +3.80 µm, power coupled (κ²)0.00640 ± 2.38 × 10⁻⁴0.00265 (−0.00375, outside)0.00258 (−0.00382, outside)no value (no model for two bending waveguides)
3 µm S-bends, plane +4.00 µm, power coupled (κ²)0.00642 ± 2.40 × 10⁻⁴0.00265 (−0.00377, outside)0.00258 (−0.00384, outside)no value (no model for two bending waveguides)
6 µm S-bends, plane +6.60 µm, power coupled (κ²)0.0121 ± 4.21 × 10⁻⁴0.0101 (−0.00199, outside)0.00988 (−0.00225, outside)no value (no model for two bending waveguides)
6 µm S-bends, plane +6.80 µm, power coupled (κ²)0.0121 ± 4.20 × 10⁻⁴0.0101 (−0.00199, outside)0.00988 (−0.00225, outside)no value (no model for two bending waveguides)
6 µm S-bends, plane +7.00 µm, power coupled (κ²)0.0121 ± 4.14 × 10⁻⁴0.0101 (−0.00198, outside)0.00988 (−0.00224, outside)no value (no model for two bending waveguides)

Meep 1.34.0, a full 3D simulation, at 50 pixels per µm. The range spans two ways of drawing the curved walls on the grid, at that one resolution.